19.11.2012 | V. Ievlev, M. Sumets, A. Kostyuchenko, N. Bezryadin, Journal of Materials Science: Materials in Electronics, 2012

Single-axis textured polycrystalline LiNbO3 films were grown on (001) Si substrates by the RF magnetron sputtering method. Dielectric losses that occur in the Si–LiNbO3 heterostructures are caused by the conductivity of the LiNbO3 films. Analysis of temperature and frequency dependence of ac ...

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19.11.2012 | Gang Dou, Dongxiang Zhou, Shuping Gong, Mei Guo, Journal of Materials Science: Materials in Electronics, 2012

The influence of zinc borate (ZB) glass on densification, phase composition, microstructure and microwave dielectric properties of Li2ZnSiO4 ceramics has been investigated by using X-ray diffraction, scanning electron microscopy and Advantest network analyzer. Undoped Li2ZnSiO4 ceramics ...

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14.11.2012 | Dharmendra Pal, Shahanshah Haider Abdi, Ghanshyam Tripathi, Virendra Kumar Maurya, Kapil Sachan, Sagir Ahamad Khan, Journal of Materials Science: Materials in Electronics, 2012

Sintered ceramic samples of Na2Ti3O7 with 50 % (1.0 Molar Percentage of Li2CO3 i. e. 50 % Lithium) with different doping molar percentages MnO2 (0.0 < ...

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14.11.2012 | Ningbo Liao, Wei Xue, Hongming Zhou, Miao Zhang, Journal of Materials Science: Materials in Electronics, 2012

Amorphous silicon dioxide exhibits low temperature expansion coefficient and stability of dielectric properties over a wide range of frequencies and temperatures, and plays an important role in integrated circuits and microelectronics. Downscaling of dimensions in there devices means great ...

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13.11.2012 | B. V. Rajendra, Benjamin Fuchs, Kekuda Dhananjaya, Journal of Materials Science: Materials in Electronics, 2012

Cadmium sulfide (CdS) thin films were deposited on glass substrate at room temperature by successive ionic layer adsorption and reaction method (SILAR). The deposition parameters such as rinsing time, rinsing cycle and concentration of precursor solution were varied during the preparation of ...

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09.11.2012 | Ying Liu, De-Yi Kong, Hui You, Chi-lai Chen, Xin-hua Lin, Jürgen Brugger, Journal of Materials Science: Materials in Electronics, 2012

Quaternary semiconductor Cu2ZnSnSe4 (CZTSe) is a very promising alternative to semiconductors based on indium (In) and gallium (Ga) as solar absorber material due to its direct band gap, inherent high absorption coefficient (>104 cm−1) and abundance of cheap elements zinc (Zn) and tin (Sn). ...

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09.11.2012 | Xiaohua Zhang, Wei Ren, Peng Shi, Journal of Materials Science: Materials in Electronics, 2012

Near-stoichiometric Bi1.5Zn1.0Nb1.5O7 (BZN) thin films were prepared on Pt/TiO2/SiO2/Si (100) substrates at 400 °C under an oxygen pressure of 10 Pa by using pulsed laser deposition process. The as-deposited BZN thin films were post-annealed at 700 °C for 30 min in situ vacuum chamber (in ...

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07.11.2012 | K. V. Mahesh, S. Anas, S. Rahul, S. Ananthakumar, Journal of Materials Science: Materials in Electronics, 2012

Nano size ZnO–Bi2O3 varistor precursor powders containing Y2O3 and Pr6O11 rare earth dopants were prepared by low temperature refluxing at 80 °C. Effect of rare earth dopants, densification by two-step sintering, evolution of microstructures and their influence on varistor properties were ...

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07.11.2012 | Hua Wang, Xia Zhai, Jiwen Xu, Changlai Yuan, Ling Yang, Journal of Materials Science: Materials in Electronics, 2012

KNN-LS-BF-0.4mol%CuO piezoelectric ceramics were prepared by the traditional sintering method. The effects of sintering temperature on the dielectric and piezoelectric properties of KNN-LS-BF-0.4mol%CuO ceramics were studied. The results reveal that the sintering temperature has significant ...

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07.11.2012 | Li Gong, Jianguo Lu, Zhizhen Ye, Journal of Materials Science: Materials in Electronics, 2012

Flexible optoelectronic devices are attractive because of light weight, small volume, flexibility and easy transport. Transparent conductive oxide thin films deposited on polymer substrates could satisfy the flexibility for optoelectronic devices. Ga-doped ZnO (GZO) films have been prepared ...

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