12.06.2013 | Paul H. Holloway, Hendrik C. Swart, and O. Martin Ntwaeaborwa, Journal of Vacuum Science & Technology B, 2013

The range of phenomena occurring on the surface of phosphors during cathodoluminescence (CL) has been reviewed. In particular, the consequences of beam-stimulated dissociation, absorption, desorption, and reactions on the lifetime and maintenance of CL phosphors were illustrated by several ...

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06.06.2013 | Felix Sharipov, Journal of Vacuum Science & Technology B, 2013

In vacuum technology, one deals with gaseous mixtures more frequently than with a single gas, but the information about transport phenomena in mixtures published in the open literature is very poor. Moreover, methods to model mixture flows are more complicated than those for single gas. The ...

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06.06.2013 | Roya Maboudian, Carlo Carraro, Debbie G. Senesky, and Christopher S. Roper, Journal of Vacuum Science & Technology B, 2013

Advances in silicon carbide microfabrication and growth process optimization for silicon carbide nanostructures are ushering in new opportunities for microdevices capable of operation in a variety of demanding applications, involving high temperature, radiation, or corrosive environment. This ...

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30.05.2013 | Gang Shen, Nabil Dawahre, Joseph Waters, Seongsin M. Kim, and Patrick Kung, Journal of Vacuum Science & Technology B, 2013

Zinc oxide (ZnO) nanowire (NW) arrays were grown by chemical vapor deposition using the carbothermal reduction of ZnO powder at different pressures from 0.13 to 1.0 atm on basal plane sapphire substrates. The ZnO NWs were oriented in their [0001] direction. Lower growth pressures led to ...

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30.05.2013 | Jason K. Kawasaki, Thomas Neulinger, Rainer Timm, Martin Hjort, Alexei A. Zakharov et al., Journal of Vacuum Science & Technology B, 2013

The Half Heuslers are currently an attractive family of compounds for high temperature thermoelectrics research, and recently, there has been renewed interest since some of these compounds are proposed to be topological insulators. NiTiSn belongs to the family of 18 valence electron Half ...

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24.05.2013 | R. B. Konda, C. White, D. Thomas, Q. Yang, and A. K. Pradhan, Journal of Vacuum Science & Technology B, 2013

GaAs based metal oxide semiconductor capacitors were fabricated with zirconium oxide (ZrO2) using atomic layer deposition. The effect of growth temperature of ZrO2 dielectric films on GaAs was studied. The ZrO2 layers were deposited using tetrakis dimethyl amido zirconium and water in the ...

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23.05.2013 | Guibin Song, Hiroaki Matsui, Hisazumi Akai, and Hitoshi Tabata, Journal of Vacuum Science & Technology B, 2013

A single phase of β-FeSe was obtained under Se-rich conditions (β-FeSey: y ≧ 1.15) using pulsed laser deposition. The excess Se content in the layers resulted in a decrease of the unit cell volume owing to the nonstoichiometric composition. However, β-FeSey layers did not show any remarkable ...

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16.05.2013 | C. Y. Chou, A. Torfi, and W. I. Wang, Journal of Vacuum Science & Technology B, 2013

Low resistance ohmic contacts are important for high frequency applications of InP-based heterojunction bipolar transistors and high electron mobility transistors. In this paper, the authors investigate the use of an InAs layer as the low-resistance ohmic contact to these heterostructure ...

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16.05.2013 | Saumya Sengupta, Arjun Mandal, Hemant Ghadi, Subhananda Chakrabarti, and Keshav Lal Mathur, Journal of Vacuum Science & Technology B, 2013

Here the authors report a comprehensive study on InAs sub-monolayer quantum dots with different capping layers. After performing systematic optimization of InAs deposition and GaAs thickness, they grew three samples, namely A, B and C, using solid-state molecular beam epitaxy with identical ...

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15.05.2013 | Mireille Gaillard, Christian Kubel, Chantal Boulmer-Leborgne, Di Wang, Nadjib Semmar et al., Journal of Vacuum Science & Technology B, 2013

Vertically aligned carbon nanotubes (CNTs) are grown by plasma enhanced chemical vapor deposition and are analyzed by high-resolution transmission electron microscopy. With this process, the growth of vertically aligned and densely packed CNTs can only be obtained with an Fe catalyst on an ...

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