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413 Aktuelle Fachpublikationen zum Thema temperature

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Three-step growth of metamorphic GaAs on Si(001) by low-pressure metal organic chemical vapor deposition

13.09.2013 | Yifan Wang, Qi Wang, Zhigang Jia, Xiaoyi Li, Can Deng et al., Journal of Vacuum Science & Technology B, 2013

In this study, metamorphic growth of GaAs on Si(001) substrate was investigated via three-step growth in a low-pressure metal organic chemical vapor deposition reactor. Three-step growth was achieved by simply inserting an intermediate temperature GaAs layer between the low temperature GaAs ...

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Potassium hydroxide polishing of nanoscale deep reactive-ion etched ultrahigh aspect ratio gratings

12.09.2013 | Alexander Bruccoleri, Dong Guan, Pran Mukherjee, Ralf K. Heilmann, Mark L. Schattenburg et al., Journal of Vacuum Science & Technology B, 2013

A fabrication process has been developed to chemically polish the sidewalls of 200 nm-pitch gratings via potassium hydroxide (KOH) etching following the Bosch deep reactive-ion etching (DRIE) process. Previous KOH polishing experiments focused on micron scale features. This work is the first ...

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Measurements of sputtered neutrals and ions and investigation of their roles on the plasma properties during rf magnetron sputtering of Zn and ZnO targets

12.09.2013 | L. Maaloul and L. Stafford, Journal of Vacuum Science & Technology B, 2013

Langmuir probe and optical absorption spectroscopy measurements were used to determine the line-integrated electron density, electron temperature, and number density of Ar atoms in metastable 3P2 and 3P0 levels in a 5 mTorr, rf magnetron sputtering plasmas used for the deposition of ZnO-based ...

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Temperature stability of high-resistivity GaN buffer layers grown by metalorganic chemical vapor deposition

10.09.2013 | Alexander Y. Polyakov, N. B. Smirnov, E. A. Kozhukhova, Andrei V. Osinsky, and Stephen J. Pearton, Journal of Vacuum Science & Technology B, 2013

Nominally undoped GaN films were grown by metalorganic chemical vapor deposition under three different conditions, namely (1) “standard” growth conditions with growth temperature of 1000 °C and growth rate of 1 μm/h, (2) slightly reduced growth temperature of 975 °C, and (3) standard temperature, ...

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Fabrication of GaN nanodots via GaN thermal decomposition in H2 atmosphere

03.09.2013 | Xiong Hui, Jin Zhang, Senlin Li, Hu Wang, Yanyan Fang et al., Journal of Vacuum Science & Technology B, 2013

GaN nanodots were fabricated by thermal decomposition of GaN in H2 atmosphere at high temperatures. By varying annealing time and temperature, it was found that dot size and density were highly dependent on annealing conditions. Surface morphology of the sample indicates that the dot formation ...

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Strain induced microstructural and ordering behaviors of epitaxial Fe38.5Pd61.5 films grown by pulsed laser deposition

29.08.2013 | Matthew A. Steiner, Ryan B. Comes, Jerrold A. Floro, William A. Soffa, James M. Fitz-Gerald et al., Journal of Vacuum Science & Technology B, 2013

Epitaxial films of Fe38.5Pd61.5 at the L10-L12 eutectoid composition have been grown on MgO (001) oriented substrates by pulsed laser deposition. The effect of deposition temperature on the magnetic, microstructural, and crystallographic natures of these films are discussed. The films in this ...

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Growth of one-dimensional vertically aligned carbon nanostructures on SiC—Catalyst effect

28.08.2013 | Goknur (Cambaz) Buke, Journal of Vacuum Science & Technology B, 2013

Application of catalyst on SiC wafer resulted in the formation of one-dimensional (1D) vertically aligned carbon nanostructures at low temperature and vacuum values (compared to SiC decomposition) without extra carbon supply into the system. Resulting nanostructures were characterized using ...

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Simulation of the transient heat transfer between two coaxial cylinders

27.08.2013 | Irina Graur, Minh Tuan Ho, and Martin Wuest, Journal of Vacuum Science & Technology B, 2013

The transient heat flux between two coaxial cylinders is studied on the basis of the numerical solution of the nonlinear unsteady S-model kinetic equation. A large range of the gas rarefaction and two temperature ratios between the cylinders' walls are considered. The time evolutions of the ...

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Smooth MgO films grown on graphite and graphene by pulsed laser deposition

27.08.2013 | Sean C. Stuart, Edward Satchet, Andreas Sandin, Jon-Paul Maria, John E. (Jack) Rowe et al., Journal of Vacuum Science & Technology B, 2013

Pulsed laser deposition was used to grow thin (1–100 nm) magnesium oxide films directly on graphite and epitaxial graphene on SiC(0001). The authors observe very smooth (typical rms roughness of ∼0.4 nm) film morphologies that are nearly independent of film thickness and conformal to the ...

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Planar metal–insulator–metal diodes based on the Nb/Nb2O5/X material system

15.08.2013 | Matthew L. Chin, Prakash Periasamy, Terrance P. O'Regan, Matin Amani, Cheng Tan et al., Journal of Vacuum Science & Technology B, 2013

The authors report the performance of various planar metal–insulator–metal (MIM) tunneling diodes, which are being investigated for use in rectenna devices for energy harvesting applications. Six cathode materials (M2): Nb, Ag, Cu, Ni, Au, and Pt are studied in conjunction with Nb as the anode ...

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