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534 Aktuelle Fachpublikationen zum Thema temperature

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Mechanism of oxygen sensing on β‐Ga2O3 single‐crystal sensors for high temperatures

19.11.2015 | M. Bartic, physica status solidi (a), 2015

The oxygen‐sensing mechanism on gallium oxide sensors has been analyzed in the presence of an oxygen gas flow at elevated temperatures: 700, 750, 800, 850, 900, 950, and 1000 °C. For the present study, the sensors were prepared based on a β‐Ga2O3 single crystal in a sandwich structure using ...


Room‐temperature dynamic quasi‐elastic mechanical behavior of a Zr–Cu–Fe–Al bulk metallic glass

19.11.2015 | V. Yu. Zadorozhnyy, M. Yu. Zadorozhnyy, A. Yu. Сhuryumov, S. V. Ketov, I. S. Golovin, D. V. Louzguine‐Luzgin, physica status solidi (a), 2015

The paper represents storage modulus and internal friction modulation upon cyclic loading of Zr61Cu27Fe2Al10 bulk metallic glassy samples within quasi‐reversible deformation regime. The structure of the samples was studied by X‐ray diffraction and transmission electron microscopy including ...


Addition of molybdenum into amorphous glass‐coated microwires usable as temperature sensors in biomedical applications

18.11.2015 | Radovan Hudak, Rastislav Varga, Irenej Polacek, Peter Klein, Ivan Skorvanek, Vladimir Komanicky, Rafael P. del. Real ..., physica status solidi (a), 2015

Compared to other sensors, such as radio‐frequency identification sensors, microwires have a significant advantage due to their small dimensions and contact‐free reading. The most important advantage is that a microwire is considered to be a biocompatible material due to the glass‐coating ...


Physical aging and charge transport in poly(3‐hexylthiophene)

17.11.2015 | Volodimyr V. Duzhko, physica status solidi (a), 2015

The bulk charge transport in a series of regioregular poly(3‐hexylthiophene) materials with different molecular weights (MW) has been studied by the time‐of‐flight technique. Three distinct temperature regions with transitions at ∼60 and ∼140 °C in lower MW material (9.6 kDa), and four regions ...


Noble metal‐doping of nanostructured tin(II) sulfide

17.11.2015 | Oliver Falkenbach, Jan Tinz, Anne S. Schulze, Eckhard Mueller, Sabine Schlecht, physica status solidi (a), 2015

Containing two environmentally friendly elements, tin monosulfide (SnS) is considered to be a possible candidate for sustainable thermoelectrics in the medium temperature range. Nanostructured SnS was synthesized via mechanical alloying and a solvothermal method. Two different ways for ...


Influence of AlN nucleation layer on vertical breakdown characteristics for GaN‐on‐Si

17.11.2015 | J. J. Freedsman, A. Watanabe, Y. Yamaoka, T. Kubo, T. Egawa, physica status solidi (a), 2015

A study of metal‐organic chemical vapor deposition (MOCVD) grown AlN nucleation layer (NL) on breakdown characteristics for GaN‐on‐Si is presented. It is widely believed that AlN NL can act as an insulator because of its large band gap ∼6.2 eV. On contrary, this study of AlN NL/Si reveals ...


Thermal‐annealing dependence of crystallization on solution‐processed small‐molecule organic photovoltaics

17.11.2015 | Deying Luo, Jiaxiu Man, Leiming Yu, Zhu Liu, Jun Peng, Guozheng Shi, Xiangxiang Zhu, Wanli Ma, physica status solidi (a), 2015

For solution‐based small‐molecule organic photovoltaic cells (SM BHJ), thermal annealing is often regarded as a very vital processing to yield high‐efficiency devices. Here, the device with the photoactive p‐DTS(FBTTh2)2:PC60BM blends has been studied by varying the annealing temperature. The ...


Temperature‐dependent optical, spectral, and thermal characteristics of InGaN/GaN near‐ultraviolet light‐emitting diodes

16.11.2015 | Soo Hyun Lee, Xiang‐Yu Guan, Soo‐Kun Jeon, Jae Su Yu, physica status solidi (a), 2015

The temperature‐dependent device characteristics of InGaN/GaN near‐ultraviolet light‐emitting diodes, operating at λ ∼380 nm, with a chip size of 0.5 × 1 mm2 were reported. Their optical and spectral properties were measured and analyzed at different injection current levels and heatsink ...


Non‐volatile memory devices based on Ge nanocrystals

10.11.2015 | Dan Vasilache, Alina Cismaru, Mircea Dragoman, Ionel Stavarache, Catalin Palade, Ana‐Maria Lepadatu, Magdalena Lidia ..., physica status solidi (a), 2015

The article presents the fabrication and characterization of NV (non‐volatile) memory devices based on SiO2/Ge/SiO2 trilayer structures on Si wafers. The trilayer structures were obtained by using the magnetron sputtering method for the deposition of gate SiO2 and intermediate Ge layers and the ...


Ethanol sensing characteristics of Zn0.99M0.01O (M = Al/Ni) nanopowders

09.11.2015 | Vandna Luthra, Anita Singh, David C. Pugh, Ivan P. Parkin, physica status solidi (a), 2015

This paper presents a comparative study on gas sensing properties of pure and doped ZnO nano powders. To facilitate doping, Aluminum and nickel precursors were used as dopant/co‐dopants using a simple and reproducible co‐precipitation method. Pure ZnO and samples with compositions Zn0.99M0.01O ...


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