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450 Aktuelle Fachpublikationen zum Thema temperature

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Electrochemical characterization of a responsive macromolecular interface on gold

13.03.2015 | Artur Fandrich, Jens Buller, Daniel Schäfer, Erik Wischerhoff, André Laschewsky, Fred Lisdat, physica status solidi (a), 2015

This study reports on the investigation of a thermo­responsive polymer as a thin film on electrodes and the influence of coupling a peptide and an antibody to the film. The utilized polymer from the class of poly(oligoethylene glycol)‐methacrylate polymers (poly(OEGMA)) with carboxy functions ...

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Scanning thermal microscopy: A review

13.03.2015 | Séverine Gomès, Ali Assy, Pierre‐Olivier Chapuis, physica status solidi (a), 2015

Fundamental research and continued miniaturization of materials, components and systems have raised the need for the development of thermal‐investigation methods enabling ultra‐local measurements of surface temperature and thermo‐physical properties in many areas of science and applicative ...

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BAlN thin layers for deep UV applications

11.03.2015 | Xin Li, Suresh Sundaram, Youssef El Gmili, Tarik Moudakir, Frédéric Genty, Sophie Bouchoule, Gilles Patriarche, Russ ..., physica status solidi (a), 2015

In this work, wurtzite BAlN layers with boron composition as high as 12% were successfully grown by MOVPE. The growth was performed at 650 °C and then annealed at 1020 °C. Low temperature growth was used in order to alleviate B‐rich phase poisoning under high TEB/III ratio. The growth was ...

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A simple and flexible thermal illusion device and its experimental verification

24.02.2015 | Tian Hang Chen, Fan Yang, Zhong Lei Mei, physica status solidi (a), 2015

A new kind of thermal illusion device is proposed, which requires one layer of homogeneous and isotropic thermal conducting materials. Unlike the transformation optics method, this illusion device is analytically designed by matching two distinct temperature profiles along a controlled ...

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Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs

23.02.2015 | Máire Power, James W. Pomeroy, Yohei Otoki, Takeshi Tanaka, Jiro Wada, Masaaki Kuzuhara, Wolfgang Jantz, Andrew Souz ..., physica status solidi (a), 2015

The thermal conductivity of the GaN buffer layer in AlGaN/GaN devices can be determined by measuring the vertical temperature gradient through this layer. In this work, diamond micro‐thermometers and standard micro‐Raman thermography were used to determine the surface and volumetric depth ...

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Performance enhancement of gallium‐nitride‐based flip‐chip light‐emitting diode with through‐via structure

18.02.2015 | Luqiao Yin, Yang Bai, Tingting Nan, Jianhua Zhang, physica status solidi (a), 2015

For the study of the performance enhancement of a gallium‐nitride‐based flip‐chip light‐emitting diode with through‐via structure (FC‐LED), FC‐LED and conventional high‐power light‐emitting diode (HP‐LED) were fabricated simultaneously with the same epitaxial structures and packaging processes. ...

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Electrical porous silicon sensor for detection of various organic molecules in liquid phase

16.02.2015 | Farid A. Harraz, Adel A. Ismail, Huocine Bouzid, Saleh A. Al‐Sayari, Ali Al‐Hajry, Mohammad S. Al‐Assiri, physica status solidi (a), 2015

An electrical sensor based on porous silicon (PSi) for the detection of various organic molecules in the liquid phase is demonstrated. PSi layers with a thickness of ~4.5 μm and pore sizes in the range of 30 nm were initially synthesized by the electrochemical anodization of a silicon wafer. ...

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Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma

29.12.2014 | Chunho Kang, Heeyoung Jeon, Woochool Jang, Hyoseok Song, Honggi Kim, Hyunjung Kim, Hyeongtag Jeon, physica status solidi (a), 2014

This study examined the effect of a novel precursor on the growth behavior and structure of titanium dioxide (TiO2) thin films. TiO2 thin films were deposited by remote plasma atomic layer deposition (RPALD). Dimethylamin‐cyclopentadienyl titanium, (CpN)Ti(NMe2)2, was used as a Ti precursor and ...

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Nanoprobe mechanical and piezoelectric characterization of ScxAl1−xN(0001) thin films

17.12.2014 | Agnė Žukauskaitė, Esteban Broitman, Per Sandström, Lars Hultman, Jens Birch, physica status solidi (a), 2014

Nanoindentation with in‐situ electrical characterization is used to investigate piezoelectric scandium aluminum nitride (ScxAl1−xN) thin films with Sc contents up to x = 0.3. The films are prepared by reactive magnetron sputtering using Al2O3 substrates with TiN seed layers as bottom electrodes ...

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Influence of nanoparticle size and concentration on the electroactive phase content of PVDF in PVDF–CoFe2O4‐based hybrid films

17.12.2014 | Laurence Ourry, Sofia Marchesini, Malek Bibani, Silvana Mercone, Souad Ammar, Fayna Mammeri, physica status solidi (a), 2014

The synthesis and characterization of a new magnetoelectric polymer‐oxide hybrid flexible class of materials were reported. It consists of ferrimagnetic and magnetostrictive cobalt ferrite (CoFe2O4) nanoparticles (NPs) dispersed into a ferroelectric and piezoelectric polyvinylidene fluoride ...

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