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446 Aktuelle Fachpublikationen zum Thema temperature

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A simple and flexible thermal illusion device and its experimental verification

24.02.2015 | Tian Hang Chen, Fan Yang, Zhong Lei Mei, physica status solidi (a), 2015

A new kind of thermal illusion device is proposed, which requires one layer of homogeneous and isotropic thermal conducting materials. Unlike the transformation optics method, this illusion device is analytically designed by matching two distinct temperature profiles along a controlled ...


Performance enhancement of gallium‐nitride‐based flip‐chip light‐emitting diode with through‐via structure

18.02.2015 | Luqiao Yin, Yang Bai, Tingting Nan, Jianhua Zhang, physica status solidi (a), 2015

For the study of the performance enhancement of a gallium‐nitride‐based flip‐chip light‐emitting diode with through‐via structure (FC‐LED), FC‐LED and conventional high‐power light‐emitting diode (HP‐LED) were fabricated simultaneously with the same epitaxial structures and packaging processes. ...


Electrical porous silicon sensor for detection of various organic molecules in liquid phase

16.02.2015 | Farid A. Harraz, Adel A. Ismail, Huocine Bouzid, Saleh A. Al‐Sayari, Ali Al‐Hajry, Mohammad S. Al‐Assiri, physica status solidi (a), 2015

An electrical sensor based on porous silicon (PSi) for the detection of various organic molecules in the liquid phase is demonstrated. PSi layers with a thickness of ~4.5 μm and pore sizes in the range of 30 nm were initially synthesized by the electrochemical anodization of a silicon wafer. ...


Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma

29.12.2014 | Chunho Kang, Heeyoung Jeon, Woochool Jang, Hyoseok Song, Honggi Kim, Hyunjung Kim, Hyeongtag Jeon, physica status solidi (a), 2014

This study examined the effect of a novel precursor on the growth behavior and structure of titanium dioxide (TiO2) thin films. TiO2 thin films were deposited by remote plasma atomic layer deposition (RPALD). Dimethylamin‐cyclopentadienyl titanium, (CpN)Ti(NMe2)2, was used as a Ti precursor and ...


Nanoprobe mechanical and piezoelectric characterization of ScxAl1−xN(0001) thin films

17.12.2014 | Agnė Žukauskaitė, Esteban Broitman, Per Sandström, Lars Hultman, Jens Birch, physica status solidi (a), 2014

Nanoindentation with in‐situ electrical characterization is used to investigate piezoelectric scandium aluminum nitride (ScxAl1−xN) thin films with Sc contents up to x = 0.3. The films are prepared by reactive magnetron sputtering using Al2O3 substrates with TiN seed layers as bottom electrodes ...


Influence of nanoparticle size and concentration on the electroactive phase content of PVDF in PVDF–CoFe2O4‐based hybrid films

17.12.2014 | Laurence Ourry, Sofia Marchesini, Malek Bibani, Silvana Mercone, Souad Ammar, Fayna Mammeri, physica status solidi (a), 2014

The synthesis and characterization of a new magnetoelectric polymer‐oxide hybrid flexible class of materials were reported. It consists of ferrimagnetic and magnetostrictive cobalt ferrite (CoFe2O4) nanoparticles (NPs) dispersed into a ferroelectric and piezoelectric polyvinylidene fluoride ...


High rate amorphous and crystalline silicon formation by pulsed DC magnetron sputtering deposition for photovoltaics

10.12.2014 | Louise R. Bailey, Gary Proudfoot, Brodie Mackenzie, Niels Andersen, Arne Karlsson, Alexander Ulyashin, physica status solidi (a), 2014

Two methods of pulsed DC magnetron sputtering deposition have been used to form high rate, hydrogen‐free crystalline silicon layers. The first method is in situ crystalline silicon deposition. The second method is high rate amorphous silicon deposition followed by an anneal to induce ...


Synthesis, characterization, and electronic structure of few‐layer MoSe2 granular films (Phys. Status Solidi A 12∕2014)

09.12.2014 | Zafer Mutlu, Darshana Wickramaratne, Hamed H. Bay, Zachary J. Favors, Mihrimah Ozkan, Roger Lake, Cengiz S. Ozkan, physica status solidi (a), 2014

Atomically thin two‐dimensional (2D) transition‐metal dichalcogenides (TMDs) have attracted great attention recently due to their fascinating electronic properties. MoSe2, with an indirect band gap in the bulk form and a direct band gap in the monolayer form, holds promise for the ...


Low‐temperature transport of charge carriers in InGaN/GaN multiple quantum well light‐emitting diodes

05.12.2014 | Ilya Prudaev, Oleg Tolbanov, Stanislav Khludkov, physica status solidi (a), 2014

Abstract The results of experimental investigation of forward current‐voltage characteristics of InGaN/GaN multiple quantum well light‐emitting diodes are presented. A new model for explaining the complex current dependence on voltage is proposed. The model is based on the assumption of space ...


Carbon nanotube–silver nanowire composite networks on flexible substrates: High reliability and application for supercapacitor electrodes

04.12.2014 | Churl Seung Lee, Joung Eun Yoo, Kwonwoo Shin, C. O. Park, Joonho Bae, physica status solidi (a), 2014

Highly transparent, flexible and conductive networks of carbon nanotubes‐silver nanowire networks were formed on polyethylene terephthalate (PET) substrates. The high temperature and humidity tests reveal that our CNT–AgNW composite networks maintain high durability and reliability in the ...


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