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436 Aktuelle Fachpublikationen zum Thema temperature

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Zn‐poor Cu2ZnSnSe4 thin films and solar cell devices

17.11.2014 | Andrew Fairbrother, Markus Neuschitzer, Edgardo Saucedo, Alejandro Pérez‐Rodríguez, physica status solidi (a), 2014

This work reports the synthesis of photovoltaic‐grade Cu2ZnSnSe4 thin films with Zn‐poor compositions (Zn/Sn 2ZnSnSe4 requires Cu‐poor and Zn‐rich compositions, which often favor the formation the ZnSe secondary phase. Synthesis of Zn‐poor or stoichiometric films opens up prospects for ...


Electrochemically deposited ZnO nanostructured array films as antireflection coating on silicon heterojunction solar cells

12.11.2014 | M. Petrov, K. Lovchinov, M. Mews, C. Leendertz, D. Dimova‐Malinovska, physica status solidi (a), 2014

In order to improve the short‐circuit current and the efficiency of silicon heterojunction solar cells, Ag grid/ITO/(p)a‐Si:H/(i)a‐Si:H/(n)c‐Si/(i)a‐Si:H/(n+)a‐Si:H/Al, ZnO nanostructured (NS) array films are deposited by electrochemical method on the front side of the solar cells. Aqueous ...


Atomic‐layer‐deposited zinc oxide as tunable uncooled infrared microbolometer material (Phys. Status Solidi A 11∕2014)

28.10.2014 | Enes Battal, Sami Bolat, M. Yusuf Tanrikulu, Ali Kemal Okyay, Tayfun Akin, physica status solidi (a), 2014

ZnO is rapidly penetrating into thin‐film electronics, sensors, and optoelectronics industries due to its remarkable electronic and optical properties. Although serving a wide range of sectors, ZnO for infrared applications is an unexplored territory. That is why Tanrikulu and co‐workers (pp. ...


Structure, ferroelectric, ferromagnetic, and piezoelectric properties of Al‐modified BiFeO3–BaTiO3 multiferroic ceramics

24.10.2014 | Wei Zhou, Qiaoji Zheng, Ying Li, Qiang Li, Yang Wan, Min Wu, Dunmin Lin, physica status solidi (a), 2014

0.725BiFe1−xAlxO3–0.275BaTiO3 + 1 mol% MnO2 ceramics were prepared by a conventional ceramic technique. The effects of Al doping and sintering temperature on microstructure, piezoelectricity and magnetism of the ceramics were studied. The crystalline structures of BFO‐BT‐BA‐x ceramics sintered ...


Enhanced low‐field magnetoresistance of La0.7Sr0.3Mn1–xNixO3 compounds by annealing process

22.10.2014 | A. M. Ahmed, M. A. Abedellateef, H. A. Abd El‐Ghanny, Abd El Mo'ez A. Mohamed, physica status solidi (a), 2014

A study of Mn‐site substitution by Ni2+ and the effect of annealing time in polycrystalline bulk La0.7Sr0.3MnO3 in composition range (0 ≤ x ≤ 0.1) is presented. This study involves structural, electrical, magnetoresistance, and thermoelectric power (TEP) measurements. X‐ray diffraction was used ...


Co‐evaporation process study of Cu2ZnSnSe4 thin films by in situ light scattering and in situ X‐ray diffraction

21.10.2014 | Stefan Hartnauer, Leonard A. Wägele, Frank Syrowatka, Gunar Kaune, Roland Scheer, physica status solidi (a), 2014

Multi‐stage co‐evaporation processes for the growth of Cu2ZnSnSe4 (CZTSe) thin films are investigated with time‐resolved in situ angle‐dispersive X‐ray diffraction (in situ XRD). Different preparation protocols were applied and controlled by in situ laser light scattering (in situ LLS). The ...


Rapid thermal processing annealing challenges for large scale Cu2ZnSnS4 thin films

03.10.2014 | Laura Vauche, Jérôme Dubois, Aurélie Laparre, Marcel Pasquinelli, Sylvie Bodnar, Pierre‐Philippe Grand, Salvador Jaime, physica status solidi (a), 2014

Electrodeposition followed by rapid thermal annealing is a favorable process for industrial solar thin film fabrication. In this regard, we attempt to develop a process for earth‐abundant pure sulfide kesterite solar cells fabrication of Cu2ZnSnS4 (CZTS) at pre‐industrial scale (15 × 15 cm2). ...


Site‐controlled growth of GaAs nanoislands on pre‐patterned silicon substrates

03.10.2014 | Muhammad Usman, Johann Peter Reithmaier, Mohamed Benyoucef, physica status solidi (a), 2014

GaAs islands have been grown by molecular beam epitaxy on Si (100) substrates patterned with nanoscale holes using only few monolayer deposition thicknesses. The site‐controlled growth has been achieved without masking the Si surface with SiO2 between the patterned holes. The nucleation density ...


A simulation study on the impact of band gap profile variations and secondary barriers on the temperature behavior, performance ratio, and energy yield of Cu(In,Ga)(Se,S)2 solar cells

03.10.2014 | Christian Schubbert, Patrick Eraerds, Michael Richter, Jürgen Parisi, Ingo Riedel, Thomas Dalibor, Jörg Palm, physica status solidi (a), 2014

Using device simulations, we investigate the change of the temperature behavior of Cu(In,Ga)(Se,S)2 solar cells. Our goal is to understand the behavior of the performance ratio (PR), normalized energy yield (Y), and the temperature coefficient of the open‐circuit voltage as a contribution to ...


Self‐assembled Au dots in SiGe/Si layers for plasmonic application

03.10.2014 | Peter I. Gaiduk, Arne Nylandsted Larsen, physica status solidi (a), 2014

The concept of this study is based on self‐assembled formation of voids in strained Si/SiGe heterostructures, and formation of nano‐shells and nano‐particles of gold through a gettering process. The gettering of vacuum deposited gold to the voids was studied using Rutherford backscattering and ...


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