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472 Aktuelle Fachpublikationen zum Thema temperature

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Long‐throw magnetron sputtering of amorphous Zn–Sn–O thin films at room temperature

15.05.2015 | Heiko Frenzel, Tobias Dörfler, Peter Schlupp, Holger von Wenckstern, Marius Grundmann, physica status solidi (a), 2015

We report on the fabrication of amorphous zinc tin oxide (ZTO) thin films by long‐throw magnetron sputtering on glass substrate. This method is especially appropriate for the growth of amorphous oxides at room temperature. ZTO films were deposited from single ceramic target and via ...


Impact of thermal oxidation pressure and temperature on deactivation of the interfacial trap states in Al2O3/GaAs MOS capacitor

14.05.2015 | Hajin Lim, Seongkyung Kim, Joon Rae Kim, Ji Hun Song, Nae‐In Lee, Jae Kyeong Jeong, Hyeong Joon Kim, physica status solidi (a), 2015

Although GaAs is one of the most attractive channel materials for achieving high electron mobility, reduction of the interface state is still required for high quality MOS devices. In this paper, thermal oxidation under two pressures and various temperatures, and subsequent HF etching were ...


Cobalt‐iron oxides made by CVD for low temperature catalytic application

12.05.2015 | Patrick Mountapmbeme Kouotou, Zhen‐Yu Tian, physica status solidi (a), 2015

Thin films of cobalt‐iron oxides (CoFe2O4) with spinel‐type structure were prepared by pulsed‐spray evaporation chemical vapor deposition (PSE‐CVD) using Fe(acac)3 and Co(acac)3 as precursors. The optimal depositions of CVD‐type growth have been established and such growth can be achieved at ...


MOCVD of TiO2 thin films from a modified titanium alkoxide precursor

07.05.2015 | Sun Ja Kim, Van‐Son Dang, Ke Xu, Davide Barreca, Chiara Maccato, Giorgio Carraro, Raghunandan K. Bhakta, Manuela Win ..., physica status solidi (a), 2015

A new titanium precursor, [Ti(OPri)2(deacam)2] (deacam = N,N‐diethylacetoacetamide), was developed by the reaction of the parent Ti alkoxide with the β‐ketoamide. The compound, obtained as a monomeric six‐coordinated complex, was used in metal organic chemical vapor deposition (MOCVD) of TiO2 ...


Self‐seeding gallium oxide nanowire growth by pulsed chemical vapor deposition

07.05.2015 | Peter J. Pallister, Sydney C. Buttera, Seán T. Barry, physica status solidi (a), 2015

A new heteroleptic gallium (III) alkyl amidinate [monoacetamidinatodiethylgallium(III), compound 1] was found to undergo self‐seeding pulsed chemical vapor deposition (p‐CVD) to gallium metal above temperatures of 450 °C. Below this temperature, the mono‐layer formed on the surface of silica ...


Bulk transport and contact limitation of MoS2 multilayer flake transistors untangled via temperature‐dependent transport measurements

04.05.2015 | Ilja Vladimirov, Catherine Chow, Andrew‐James Strudwick, Wolfgang Kowalsky, Matthias Georg Schwab, Daniel Kälblein, ..., physica status solidi (a), 2015

Rational use of novel high‐performance semiconductors in field‐effect transistors (FETs) requires exact knowledge of the dominating charge transport mechanisms. In particular, the distinction between contact‐ and semiconductor‐limited transport is important in FETs with small channel lengths. ...


Characterisation of intrinsic silicon oxide absorber layers for use in silicon thin film solar cells

04.05.2015 | Sven Holinski, Dietmar Borchert, Stefan Hohage, Britt‐Marie Meiners, Petra Schäfer, physica status solidi (a), 2015

The use of a wide bandgap absorber layer in the top cell of a multi‐junction silicon thin film solar cell is necessary to achieve a high‐conversion efficiency. A higher bandgap of the absorber results in a higher open‐circuit voltage (Voc) of the cell. In this work, intrinsic hydrogenated ...


Temperature‐dependent optical absorption of SrTiO3

28.04.2015 | Dirk J. Kok, Klaus Irmscher, Martin Naumann, Christo Guguschev, Zbigniew Galazka, Reinhard Uecker, physica status solidi (a), 2015

Abstract The optical absorption edge and near infrared absorption of SrTiO were measured at temperatures from 4 to 1703 K. The absorption edge decreases from 3.25 eV at 4 K to 1.8 eV at 1703 K and is extrapolated to approximately 1.2 eV at the melting point (2350 K). The transmission in the ...


NMR investigation of boron impurities in refined metallurgical grade silicon

27.04.2015 | Hans‐Joachim Grafe, Wolfgang Löser, Steffen Schmitz, Miroslava Sakaliyska, Sabine Wurmehl, Stefan Eisert, Birk Reich ..., physica status solidi (a), 2015

The nuclear magnetic resonance (NMR) method was applied for tracking boron impurities in the refining process of metallurgical grade (MG) silicon. From the NMR signal of the 11B isotope at an operating temperature 4.2 K, the boron concentration can be estimated down to the order of 1–10 wppm B. ...


Downsizing of single crystalline high aspect ratio tungsten nanowires

24.04.2015 | Srdjan Milenkovic, Stefanie Drensler, Achim Walter Hassel, physica status solidi (a), 2015

Directional solidification of eutectic NiAl–W alloys offers an intuitive method to produce tungsten nanowires. Through the use of two different methods, the well‐established Bridgman method and a newer type floating zone method, the direct influence of process parameters, like the withdrawal ...


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