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484 Aktuelle Fachpublikationen zum Thema temperature

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Studies on mechanical properties of thermoelectric materials by nanoindentation

18.06.2015 | Ran He, Sonika Gahlawat, Chuanfei Guo, Shuo Chen, Tulashi Dahal, Hao Zhang, Weishu Liu, Qian Zhang, Eyob Chere, Kenn ..., physica status solidi (a), 2015

In order to fabricate durable and efficient thermoelectric generators (TEG) for applications like automobile waste heat recovery, where thermal stress is a major concern, one needs to assess the mechanical performance of the TE materials. This work reports the hardness and elastic modulus of ...


Methods comparing peculiarities of surface‐relief recording in amorphous chalcogenides

18.06.2015 | Roland Bohdan, Sandor Molnar, Sandor Kokenyesi, physica status solidi (a), 2015

Direct surface relief recording in amorphous chalcogenide semiconductors like As20Se80 and other compositions from As(Ge)–S(Se) systems essentially depends on the chemical composition, technology, and the recording conditions, resulting discrepancies in the results and interpretations. We have ...


Hopkinson effect and temperature‐dependent dielectric properties of single domain SrFe12O19 particles

17.06.2015 | M. Manikandan, K. Saravana Kumar, N. Aparnadevi, C. Venkateswaran, physica status solidi (a), 2015

Strontium hexagonal ferrite particles having single domain nature were prepared by initial ball milling followed by sintering. Effect of the synthesis method on structural, magnetic, and electrical properties were analyzed using various characterization techniques. XRD pattern reveals the ...


Thermoluminescence studies on HPHT diamond crystals exposed to β‐irradiation

11.06.2015 | M. I. Gil‐Tolano, R. Meléndrez, B. Castañeda, S. Alvarez‐Garcia, M. Pedroza‐Montero, D. Soto‐Puebla, V. Chernov, M. ..., physica status solidi (a), 2015

A study of the thermoluminescent response of commercial synthetic high pressure high temperature (HPHT) type‐Ib diamond crystals is reported. In previous works, it was found that the thermoluminescence (TL) glow curves of HPHT diamonds are non‐reproducible. In this work, we compare the TL of ...


Ge/Si core/shell nanowires with controlled low temperature grown Si shell thickness

11.06.2015 | Tomohiro Noguchi, Koudai Morita, Marolop Simanullang, Zhengyu Xu, Koichi Usami, Yukio Kawano, Tetsuo Kodera, Shunri Oda, physica status solidi (a), 2015

Ge/Si core/shell nanowires are fabricated with narrow (20 nm) Ge core and thin (2 nm) Si shell. Ge nanowires are prepared by vapor–liquid–solid (VLS) chemical vapor deposition (CVD). The low‐temperature (450 °C) process by using Si2H6 gas as a Si CVD source is essential to form ultrathin layer ...


Numerical evaluation of silicon epitaxial growth on a 450 mm diameter substrate

05.06.2015 | Misako Matsui, Hitoshi Habuka, physica status solidi (a), 2015

Silicon epitaxial growth on a 450 mm diameter silicon substrate and the related transport phenomena in a trichlorosilane‐hydrogen system were numerically evaluated. In order to minimize the gas species transport distance, the single‐wafer high‐speed rotation vertical epitaxial reactor was ...


Study of precursor chemistry and solvent systems in pp‐MOCVD processing with alumina case study

03.06.2015 | Nathaniel R. Gunby, Susan Krumdieck, Hari Murthy, Sarah L. Masters, Senzo S. Miya, physica status solidi (a), 2015

Alumina synthesis presents an opportunity to study the processing science of direct liquid injection pulsed‐pressure MOCVD. The current study uses three alumina precursors and two solvent systems to study the physical chemistry of the flash evaporation processes that can occur in the ...


Synthesis of vanadium oxide films with controlled morphologies: Impact on the metal insulator transition behaviour

02.06.2015 | Sunil Kumar, Damien Lenoble, Francis Maury, Naoufal Bahlawane, physica status solidi (a), 2015

Precise control over the growth of VO2 films with different morphologies is achieved by varying the deposition parameters in the DLI‐MOCVD process such as temperature, pressure, concentration of precursor and time of deposition. In this study, thin films of VO2 with wide range of morphologies ...


Characterization of Si and SiOx films deposited in very high‐frequency excited atmospheric‐pressure plasma and their application to bottom‐gate thin film transistors

26.05.2015 | Hiroaki Kakiuchi, Hiromasa Ohmi, Takahiro Yamada, Shogo Tamaki, Takayuki Sakaguchi, WeiCheng Lin, Kiyoshi Yasutake, physica status solidi (a), 2015

Silicon (Si) and its alloys, such as silicon oxides (SiOx) and silicon nitrides, are indispensable thin film materials for the fabrication of large‐area electronic devices. The goal of the present study is to develop a highly efficient deposition technology for good‐quality hydrogenated ...


Preparation and characterisation of epitaxial Pt/Cu/FeMn/Co thin films on (100)‐oriented MgO single crystals

20.05.2015 | Mathias Schmidt, Joachim Gräfe, Patrick Audehm, Fritz Phillipp, Gisela Schütz, Eberhard Goering, physica status solidi (a), 2015

FeMn/Co thin‐films, a purely metallic exchange‐bias system, were prepared on (100)‐oriented MgO single crystals. The layers were grown by molecular beam epitaxy (MBE). The crystalline and magnetic properties could be tuned by using sputtered Pt buffer layers deposited at variable temperatures. ...


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