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568 Aktuelle Fachpublikationen zum Thema temperature

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Properties of near‐surface layer of 64Zn+ ion hot‐implanted Si

22.07.2015 | Vladimir Privezentsev, Vaclav Kulikauskas, Eduard Steinman, Alexey Tereshchenko, Anatoly Bazhenov, Nataliya Tabachko ..., physica status solidi (c), 2015

Abstract We have investigated nanoparticles (NPs) formation in Si by 64Zn+ ion implantation at substrate temperature of 350 °C. Hot implantation was chosen to avoid amorphization of Si near‐surface layer. In as‐implanted samples the Zn crystal NPs were created. Then the samples were ...

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Thermal activation and temperature dependent PL and CL of Tb doped amorphous AlN and SiN thin films

22.07.2015 | J. Andres Guerra, Liz Montañez, Albrecht Winnacker, Francisco De Zela, Roland Weingärtner, physica status solidi (c), 2015

Abstract The effect of terbium (Tb) doping on the photoluminescence (PL) and cathodoluminescence (CL) spectra of amorphous aluminum nitride (a ‐AlN) and amorphous silicon nitride (a ‐SiN) thin films has been investigated for different temperature conditions. The samples were prepared by RF ...

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Hydrogen induced growth and coalescence of helium‐based defects

15.07.2015 | Maxime Vallet, Jean‐François Barbot, Steve Donnelly, Jonathan Hinks, Marie‐France Beaufort1, physica status solidi (c), 2015

Abstract The first stages of growth of He‐based planar defects under H supply have been investigated in (001)‐oriented Si. The H atoms were introduced by implantation using the MIAMI facility. Implantations at different temperatures were conducted in the microscope chamber and thus the ...

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Thermal decomposition of tungsten hexacarbonyl: CVD of W‐containing films under Pd codeposition and VUV assistance

05.06.2015 | Vladislav V. Krisyuk, Tatyana P. Koretskaya, Asiya E. Turgambaeva, Sergey V. Trubin, Ilya V. Korolkov, Olivier Debie ..., physica status solidi (c), 2015

Abstract Experiments on chemical vapor deposition of W(CO)6‐derived films on silicon substrates were carried out at total pressure of 5‐10 Torr within the temperature range of 250‐350 °C; in Ar or H2 flow. Metallic, carbide and oxide phases composed the obtained films. Deposition in presence ...

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Atomic redistribution of implanted Fe and associated defects around moving SiO2/Si interfaces

05.06.2015 | Anthony De Luca, Nelly Burle, Alain Portavoce, Catherine Grosjean, Stéphane Morata, Michaël Texier, physica status solidi (c), 2015

Abstract The behaviour of Fe atoms at the Si/SiO2 interface, as a modelisation of an involuntary Fe contamination before or during the oxidation process has been studied in Fe‐implanted wafers. As‐implanted and oxidized wafers were characterized by SIMS, APT, HR‐TEM and STEM‐HAADF. Successive ...

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Oxygen‐related defects: minority carrier lifetime killers in n‐type Czochralski silicon wafers for solar cell application

05.06.2015 | I. Kolevatov, V. Osinniy, M. Herms, A. Loshachenko, I. Shlyakhov, V. Kveder, O. Vyvenko, physica status solidi (c), 2015

Abstract Many authors (Haunschild et al., Phys. Status Solidi RRL 5, 199–201 (2012) [1]) reported about areas in Cz‐Si with an extremely low lifetime of minority carriers after high temperature stages of solar cell manufacture. In such regions the minority carrier lifetime may be fallen 100 ...

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In‐situ observation of chemical vapor deposition using SiHCl3 and BCl3 gases

05.06.2015 | Ayumi Saito, Kento Miyazaki, Misako Matsui, Hitoshi Habuka, physica status solidi (c), 2015

Abstract The lowest temperature for initiating the film deposition was evaluated by in situ monitoring using a highly sensitive langasite crystal microbalance (LCM) in order to produce a thin boron doped silicon film using trichlorosilane gas and boron trichloride gas at low temperatures. The ...

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Alumina thin films prepared by direct liquid injection chemical vapor deposition of dimethylaluminum isopropoxide: a process‐structure investigation

05.06.2015 | Loïc Baggetto, Jérôme Esvan, Cédric Charvillat, Diane Samélor, Hugues Vergnes, Brigitte Caussat, Alain Gleizes, Cons ..., physica status solidi (c), 2015

Abstract The development of a new process to obtain amorphous alumina thin films is presented. We show for the first time the direct liquid injection chemical vapor deposition (DLI CVD) of alumina thin films using dimethylaluminum isopropoxide (DMAI) precursor in two oxidizing atmospheres. At ...

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Structural, electrical and luminescent properties of ZnO:Li films fabricated by screen‐printing method on sapphire substrate

05.06.2015 | L. Khomenkova, V. I. Kushnirenko, M. M. Osipyonok, O. F. Syngaivsky, T. V. Zashivailo, G. S. Pekar, Yu. O. Polishchu ..., physica status solidi (c), 2015

Abstract Undoped and Li‐doped ZnO thick films were fabricated by a screen‐printing technique on sapphire substrate. The effect of sintering temperature (TS = 800, 900 and 1000 °C) and Li content ([Li] = 0.003, 0.03 and 0.3 wt%) on the photoluminescence (PL), electrical and structural ...

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Impact of bismuth incorporation into (Ga,Mn)As thin films on their structural and magnetic properties

05.06.2015 | K. Levchenko, T. Andrearczyk, J. Z. Domagala, T. Wosinski, T. Figielski, J. Sadowski, physica status solidi (c), 2015

Abstract Structural and magnetic properties of thin films of the (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor grown by the low‐temperature molecular‐beam epitaxy technique on GaAs substrates have been investigated. High‐resolution X‐ray diffraction has been applied to characterize ...

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