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553 Aktuelle Fachpublikationen zum Thema temperature

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Growth mechanism of planar or nanorod structured tungsten oxide thin films deposited via aerosol assisted chemical vapour deposition (AACVD)

13.05.2015 | Min Ling, Chris Blackman, physica status solidi (c), 2015

Abstract Aerosol assisted chemical vapour deposition (AACVD) is used to deposit tungsten oxide thin films from tungsten hexacarbonyl (W(CO)6) at 339 to 358 °C on quartz substrate. The morphologies of as‐deposited thin films, which are comprised of two phases (W25O73 and W17O47), vary from ...

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Intermolecular interaction between rare earth and manganese precursors in metalorganic chemical vapor deposition of perovskite manganite films

13.05.2015 | Toshihiro Nakamura, physica status solidi (c), 2015

Abstract The gas‐phase reaction mechanism was investigated in liquid delivery metalorganic chemical vapor deposition (MOCVD) of praseodymium and lanthanum manganite films. We studied the gas‐phase behavior of praseodymium, lanthanum, and manganese precursors under actual CVD conditions by in ...

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Hot‐wire vapor deposition of amorphous MoS2 thin films

13.05.2015 | Georgios Papadimitropoulos, Nikolaos Vourdas, A. Kontos, Maria Vasilopoulou, Dimitrios N. Kouvatsos, Nicolas Boukos, ..., physica status solidi (c), 2015

Abstract Amorphous, as shown by X‐ray diffraction measurements, MoS2 films (a‐MoS2) were deposited by heating a molybdenum wire at temperatures between 500 and 700 °C in H2S at 1 Torr. As shown by Scanning Electron Microscopy measurements, the morphology of samples depends significantly on the ...

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Impact of dopants and silicon structure dimensions on {113}‐defect formation during 2 MeV electron irradiation in an UHVEM

13.05.2015 | J. Vanhellemont, S. Anada, T. Nagase, H. Yasuda, A. Schulze, H. Bender, R. Rooyackers, A. Vandooren, physica status solidi (c), 2015

Abstract When processing Si nanowire based Tunnel Field Effect Transistors (TFETS's), a significant reduction of B diffusion with decreasing nanowire diameter is observed and attributed to reduced transient enhanced diffusion close to the nanowire surface caused by the recombination and ...

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Investigation of the kinetics of the chemical vapor deposition of aluminum from dimethylethylamine alane: experiments and computations

13.05.2015 | Ioannis G. Aviziotis, Thomas Duguet, Khaled Soussi, George Kokkoris, Nikolaos Cheimarios, Constantin Vahlas, Andreas ..., physica status solidi (c), 2015

Abstract Experiments and computations are performed for the metalorganic chemical vapor deposition (MOCVD) of aluminum (Al) from dimethylethylamine alane (DMEAA). The deposition rate as a function of the substrate temperature and the evolution of the deposition rate along the radius of the ...

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About dislocation and oxygen related luminescence of Si around 0.8 eV

11.05.2015 | M. Kittler, T. Arguirov, M. Reiche, C. Krause, D. Mankovics, physica status solidi (c), 2015

Abstract In conjunction with the two‐level model the temperature behaviour of the dislocation‐related D1‐peak follows the T‐behaviour of the band gap. Based on luminescence observations in our laboratory and on literature data we propose a ∼30 meV wide domain of the D1 peak. Altogether, the ...

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Materials characterization and device analysis for evaluation of semiconductor processes by highly‐sophisticated photoelastic stress measurement technique

11.05.2015 | Martin Herms, Matthias Wagner, Alexander Molchanov, Pinyen Lin, Ingrid De Wolf, Ming Zhao, physica status solidi (c), 2015

Abstract SIRD (Scanning Infrared Depolarization Imager) and SIREX (Scanning Infrared Stress Explorer) are measurement systems to evaluate and visualize the stress distribution in semiconductor materials and devices. Some main fields of application are crystal growth, high temperature ...

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CVD synthesis and catalytic combustion application of chromium oxide films

07.05.2015 | Jing Liang, Guan‐Fu Pan, Shi‐Bin Fan, Wei‐Liang Cheng, Zhen‐Yu Tian, physica status solidi (c), 2015

Abstract Chromiumoxide (Cr2O3) thin films were controllably synthesized by pulsed‐spray evaporation chemical vapor deposition (PSE‐CVD) for deep oxidation of propene. The effect of substrate temperature on the growth kinetics and morphology of the films was investigated. The prepared samples ...

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Kinetic study of MOCVD of NiO films from bis‐(ethylcyclopentadienyl) nickel

07.05.2015 | A. S. Kondrateva, M. Mishin, A. Shakhmin, M. Baryshnikova, S. E. Alexandrov, physica status solidi (c), 2015

Abstract NiO films were grown by metal‐organic chemical vapor deposition (MOCVD) using bis‐(ethylcyclopentadienyl) nickel [(EtCp)2Ni] and oxygen or ozone as precursors. The kinetic regularities of MOCVD processes were experimentally studied in the deposition temperature range 600‐820 K for the ...

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Effect of substrate temperature on initiated plasma enhanced chemical vapor deposition of PHEMA thin films

07.05.2015 | Mehmet Gürsoy, Mustafa Karaman, physica status solidi (c), 2015

Abstract Poly(2‐hydroxyethyl methacrylate) (PHEMA) thin films were deposited on silicon wafers by initiated plasma enhanced chemical vapour deposition (i‐PECVD) method at different substrate temperatures. Di tert‐butyl peroxide (TBPO) was used as an initiator, and all deposition experiments ...

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