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525 Aktuelle Fachpublikationen zum Thema temperature

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Excitonic emission of TlGaSe2

09.04.2015 | Masashi Hagiwara, Raul Paucar, YongGu Shim, Kazuki Wakita, Oktay Alekperov, Arzu Najafov, Nazim Mamedov, physica status solidi (c), 2015

Abstract Photoluminescence (PL) spectra in the band‐edge region of bulk single‐crystals of layered ternary chalcogenide TlGaSe2 were examined at low temperature using confocal microscopy. Obvious PL emission near the band‐edge region appeared only when the excitation light travelled in the ...


Electrical performance of the InGaP solar cell irradiated with low energy electron beams

09.04.2015 | Yasuki Okuno, Shuichi Okuda, Takeo Kojima, Takashi Oka, Shirou Kawakita, Mitsuru Imaizumi, Hiroaki Kusawake, physica status solidi (c), 2015

Abstract The investigation of the radiation degradation characteristics of InGaP space solar cells is important. In order to understand the mechanism of the degradation by radiation the samples of the InGaP solar cell were irradiated in vacuum and at ambient temperature with electron beams ...


Characterization and effect of calcination temperature on structural properties of spinel zinc aluminate synthesized via Co‐precipitation process

07.04.2015 | Wanichaya Mekprasart, Suchada Worasawat, Thanit Tangcharoen, Wisanu Pecharapa, physica status solidi (c), 2015

Abstract Zinc aluminate (ZnAl2O4) nanopowders were synthesized by co‐precipitation method using zinc chloride and aluminum chloride as starting precursors. The calcination temperature which was a crucial preparation factor was varied and its influence on relevant physical properties of the ...


Effect of arsenic cracking on In incorporation into MBE‐grown InGaAs layer

07.04.2015 | Hiromu Iha, Yujiro Hirota, Masatsugu Yamauchi, Nao Yamamoto, Takahiro Maruyama, Shigeya Naritsuka, physica status solidi (c), 2015

Abstract The effect of arsenic cracking on In incorporation in MBE‐grown InGaAs selective growth was systematically studied with changing the cracking cell temperature. Incorporation of In was greatly enhanced by the use of As2 molecular beam during the selective growth at 600 °C. On the other ...


EPR and SPM studies of Zn‐Ni ferrites

07.04.2015 | Sh. N. Aliyeva, Y. N. Aliyeva, A. I. Nadjafov, I. S. Hasanov, E. K. Huseynov, T. R. Mehdiyev, physica status solidi (c), 2015

Abstract Electron paramagnetic resonance studies have been carried out over 3.7‐300 K on micropowders of Ni1‐xZnxFe2O4 ferrites, obtained by high temperature synthesis and preliminary characterized by X‐ray diffraction and differential scanning calorimetry in a wide range of tempera‐tures. ...


Excitonic emission on CuInS2 epitaxial films by pulse laser deposition

30.03.2015 | Ryo Yoshida, Tseng Po‐Han, Yong‐Gu Shim, Kazuki Wakita, physica status solidi (c), 2015

Abstract Thin films of epitaxial CuInS2 were deposited on a GaAs substrate at a temperature of 500 ºC by the pulse‐laser‐deposition method. Surface and cross‐section scanning electron microscopy (SEM) images were taken for all the films, with thicknesses estimated to range between 0.5‐1 μm. ...


Crystallization mechanism of sol‐gel synthesized spinel LiMn2O4

30.03.2015 | K. Kushida, K. Kuriyama, physica status solidi (c), 2015

Abstract Crystallization mechanism of sol‐gel synthesized spinel LiMn2O4 is studied by a differential scanning calorimetry (DSC) method. Lithium acetate and manganese acetate are dissolved in methanol in the atomic ratio of 1:2 (Li:Mn) with citric acid as a chelating agent, leading to a sol ...


Low‐temperature heteroepitaxial growth of InAlAs layers on ZnSnAs2/InP(001)

30.03.2015 | Hiroto Oomae, Akiko Suzuki, Hideyuki Toyota, Shin'ichi Nakamura, Naotaka Uchitomi, physica status solidi (c), 2015

Abstract We studied the epitaxial growth of InAlAs on ZnSnAs2 thin films to establish magnetic heterostructures involving ferromagnetic Mn‐doped ZnSnAs2 (ZnSnAs2:Mn) thin films. These heterostructures were successfully grown at temperatures around 300 °C to maintain room‐temperature ...


2D AlN crystal phase formation on (0001) Al2O3 surface by ammonia MBE

18.03.2015 | Timur Malin, Vladimir Mansurov, Yury Galitsyn, Konstantin Zhuravlev, physica status solidi (c), 2015

Abstract Kinetics of a two‐dimensional (2D) AlN layer formation on (0001) sapphire (Al2O3) surface during nitridation at different ammonia fluxes is investigated by reflection high energy electron diffraction (RHEED). The process on the surface is described in the framework of a chemical ...


Improved thermal stability and narrowed line width of photoluminescence from InGaN nanorod by ytterbium doping

18.03.2015 | Jingzhou Wang, Kiran Dasari, Kevin Cooper, Venkata R. Thota, Jason Wright, Ratnakar Palai, David C. Ingram, Eric A. ..., physica status solidi (c), 2015

Abstract Nanorod of in situ Yb‐doped InGaN and undoped InGaN have been grown on (0001) sapphire substrates by plasma assisted molecular beam epitaxy (MBE). Selected regions on Yb‐doped InGaN sample show single dominant near band edge emission (NBE) in green, yellow or orange color due to the ...


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