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565 Aktuelle Fachpublikationen zum Thema temperature

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Thermal decomposition of tungsten hexacarbonyl: CVD of W‐containing films under Pd codeposition and VUV assistance

05.06.2015 | Vladislav V. Krisyuk, Tatyana P. Koretskaya, Asiya E. Turgambaeva, Sergey V. Trubin, Ilya V. Korolkov, Olivier Debie ..., physica status solidi (c), 2015

Abstract Experiments on chemical vapor deposition of W(CO)6‐derived films on silicon substrates were carried out at total pressure of 5‐10 Torr within the temperature range of 250‐350 °C; in Ar or H2 flow. Metallic, carbide and oxide phases composed the obtained films. Deposition in presence ...


Atomic redistribution of implanted Fe and associated defects around moving SiO2/Si interfaces

05.06.2015 | Anthony De Luca, Nelly Burle, Alain Portavoce, Catherine Grosjean, Stéphane Morata, Michaël Texier, physica status solidi (c), 2015

Abstract The behaviour of Fe atoms at the Si/SiO2 interface, as a modelisation of an involuntary Fe contamination before or during the oxidation process has been studied in Fe‐implanted wafers. As‐implanted and oxidized wafers were characterized by SIMS, APT, HR‐TEM and STEM‐HAADF. Successive ...


Oxygen‐related defects: minority carrier lifetime killers in n‐type Czochralski silicon wafers for solar cell application

05.06.2015 | I. Kolevatov, V. Osinniy, M. Herms, A. Loshachenko, I. Shlyakhov, V. Kveder, O. Vyvenko, physica status solidi (c), 2015

Abstract Many authors (Haunschild et al., Phys. Status Solidi RRL 5, 199–201 (2012) [1]) reported about areas in Cz‐Si with an extremely low lifetime of minority carriers after high temperature stages of solar cell manufacture. In such regions the minority carrier lifetime may be fallen 100 ...


In‐situ observation of chemical vapor deposition using SiHCl3 and BCl3 gases

05.06.2015 | Ayumi Saito, Kento Miyazaki, Misako Matsui, Hitoshi Habuka, physica status solidi (c), 2015

Abstract The lowest temperature for initiating the film deposition was evaluated by in situ monitoring using a highly sensitive langasite crystal microbalance (LCM) in order to produce a thin boron doped silicon film using trichlorosilane gas and boron trichloride gas at low temperatures. The ...


Alumina thin films prepared by direct liquid injection chemical vapor deposition of dimethylaluminum isopropoxide: a process‐structure investigation

05.06.2015 | Loïc Baggetto, Jérôme Esvan, Cédric Charvillat, Diane Samélor, Hugues Vergnes, Brigitte Caussat, Alain Gleizes, Cons ..., physica status solidi (c), 2015

Abstract The development of a new process to obtain amorphous alumina thin films is presented. We show for the first time the direct liquid injection chemical vapor deposition (DLI CVD) of alumina thin films using dimethylaluminum isopropoxide (DMAI) precursor in two oxidizing atmospheres. At ...


Structural, electrical and luminescent properties of ZnO:Li films fabricated by screen‐printing method on sapphire substrate

05.06.2015 | L. Khomenkova, V. I. Kushnirenko, M. M. Osipyonok, O. F. Syngaivsky, T. V. Zashivailo, G. S. Pekar, Yu. O. Polishchu ..., physica status solidi (c), 2015

Abstract Undoped and Li‐doped ZnO thick films were fabricated by a screen‐printing technique on sapphire substrate. The effect of sintering temperature (TS = 800, 900 and 1000 °C) and Li content ([Li] = 0.003, 0.03 and 0.3 wt%) on the photoluminescence (PL), electrical and structural ...


Impact of bismuth incorporation into (Ga,Mn)As thin films on their structural and magnetic properties

05.06.2015 | K. Levchenko, T. Andrearczyk, J. Z. Domagala, T. Wosinski, T. Figielski, J. Sadowski, physica status solidi (c), 2015

Abstract Structural and magnetic properties of thin films of the (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor grown by the low‐temperature molecular‐beam epitaxy technique on GaAs substrates have been investigated. High‐resolution X‐ray diffraction has been applied to characterize ...


Process‐structure‐properties relationship in direct liquid injection chemical vapor deposition of amorphous alumina from aluminum tri‐isopropoxide

26.05.2015 | Pierre‐Luc Etchepare, Loïc Baggetto, Hugues Vergnes, Diane Samélor, Daniel Sadowski, Brigitte Caussat, Constantin Vahlas, physica status solidi (c), 2015

Abstract We propose a method to apply amorphous alumina films on the inner surface of glass containers aiming to improve their hydrothermal barrier property. We have carried out alumina deposition on Si substrates as a function of deposition temperature to determine the physico‐chemical ...


Titania‐based photocatalytic coatings on stainless steel hospital fixtures

26.05.2015 | S. Krumdieck, S. S. Miya, D. Lee, S. Davies‐Talwar, C. M. Bishop, physica status solidi (c), 2015

Abstract A scaled‐up pulsed‐pressure MOCVD system was used to deposit TiO2 coatings from tetra‐isopropoxide precursor solution on stainless steel substrates and on 3‐D objects. The objective of the work is the production of antimicrobial coatings for handles in health care facilities. ...


Electrical characteristics of vapor deposited amorphous MoS2 two‐terminal structures and back gate thin film transistors with Al, Au, Cu and Ni‐Au contacts

26.05.2015 | Dimitrios N. Kouvatsos, George Papadimitropoulos, Thanassis Spiliotis, Maria Vasilopoulou, Davide Barreca, Alberto G ..., physica status solidi (c), 2015

Abstract Amorphous molybdenum sulphide (a‐MoS2) thin films were deposited at near room temperature on oxidized silicon substrates and were electrically characterized with the use of two‐terminal structures and of back‐gated thin film transistors utilizing the substrate silicon as gate. ...


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