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509 Aktuelle Fachpublikationen zum Thema temperature

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Effect of 2.5 MeV proton irradiation on the critical parameters of composite HTS tapes

29.10.2014 | Landysh Antonova, Timofey Demikhov, Alexey Troitskii, Alexander Didyk, Alexander Kobzev, Alexander Yurasov, Sergey S ..., physica status solidi (c), 2014

Abstract In this paper we study the radiation resistance of high temperature superconductor (HTS) tapes based on GdBCO produced by SuperOx‐Japan Company to proton irradiation with an energy of 2.5 MeV in the fluence range from 6.1×1014 p/cm2 to 1×1017 p/cm2. The dependences of critical ...

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Ion beam synthesis of embedded III‐As nanocrystals in silicon substrate

29.10.2014 | Rim Khelifi, Mathieu Frégnaux, Yann Le Gall, Dominique Muller, Guy Schmerber, Daniel Mathiot, physica status solidi (c), 2014

Abstract Our goal is to use the versatility of ion beam synthesis to grow nanocrystals of InxGa1‐xAs alloys embedded in a silicon substrate. We study, first, the annealing conditions necessary to grow well defined InAs and GaAs binary nanocrystals. High dose of As, Ga and In is implanted, ...

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Raman microscopy as a defect microprobe for hydrogen bonding characterization in materials used in fusion applications

29.10.2014 | Cédric Pardanaud, Younès Addab, Céline Martin, Pascale Roubin, Bernard Pegourié, Martin Oberkofler, Martin Köppen, T ..., physica status solidi (c), 2014

Abstract We present the Raman microscopy ability to detect and characterize the way hydrogen is bonded with elements that will be used for ITER's plasma facing components. For this purpose we first use hydrogenated amorphous carbon samples, formed subsequently to plasma‐wall interactions ...

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Kinetic Monte Carlo simulation of nanostructural evolution under post‐irradiation annealing in dilute FeMnNi

29.10.2014 | M. Chiapetto, C. S. Becquart, C. Domain, L. Malerba, physica status solidi (c), 2014

Abstract Post‐irradiation annealing experiments are often used to obtain clearer information on the nature of defects produced by irradiation. However, their interpretation is not always straightforward without the support of physical models. We apply here a physically‐based set of parameters ...

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Thermodynamic analysis of defect formation in BiFeO3

29.10.2014 | T. Tchelidze, T. Gagnidze, A. Shengelaya, physica status solidi (c), 2014

Abstract In this paper the thermodynamic analysis of equilibrium concentration of defects for the system BiFeO3(solid)‐O2 (gas) is carried out. The analysis is performed by the Kroger method of quasi‐chemical equations. The concentration of defects and free carriers vs. oxygen partial pressure ...

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Low temperature hydrogenated microcrystalline silicon‐carbon alloys deposited by RF‐PECVD

10.10.2014 | Sofia Gaiaschi, Marie‐Estelle Gueunier‐Farret, Erik V. Johnson, physica status solidi (c), 2014

Abstract Two sets of hydrogenated microcrystalline silicon carbon alloys were deposited by standard radio frequency (RF) plasma enhanced chemical vapor deposition at a substrate temperature of 175 °C. The effect of the methane flow rate and of the RF‐power were investigated. Samples were ...

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Electroluminescence of germanium LEDs on silicon: Influence of antimony doping

10.10.2014 | Bernhard Schwartz, André Klossek, Martin Kittler, Michael Oehme, Erich Kasper, Jörg Schulze, physica status solidi (c), 2014

Abstract Antimony‐doped Ge‐LEDs were subjected to electroluminescence studies at temperatures about 300 K and 80 K. The LEDs were grown on Si substrates by MBE. The thickness of the active layer was 300 nm. For the p+nn+‐LEDs the Sb concentrations were 1 × 1018, 1 × 1019, 3 × 1019, 4 × 1019, 7 ...

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Silicon film deposition on crystalline, sintered and powder substrates using an inline optical processing CVD system

30.09.2014 | André Augusto, Filipe Serra, António Vallêra, João M. Serra, physica status solidi (c), 2014

Abstract An inline optical CVD process operating at low temperature (10 mm/min) inside the furnace. Solid silicon substrates were laser textured to reduce the reflectivity, leveraging the growth rates. Laser patterning has a strong influence in the growth rate, reaching values up to 9 µm/min. ...

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Effect of total gas pressure in sputtered hydrogenated amorphous silicon

30.09.2014 | Abdelkrim Fedala, Aghilas Dad, Moussa Khefiani‐Guellil, Sonia Tata, Claude Simon, Tayeb Mohammed‐Brahim, physica status solidi (c), 2014

Abstract Hydrogenated amorphous silicon (a‐Si:H) thin films are prepared using DC magnetron sputtering method at a substrate temperature of 200 °C using a plasma of argon and hydrogen gas mixture. The effects of the total gas pressure (TGP) during the deposition on structural, optical and ...

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Room temperature kerfless silicon thin foils obtained via a stress inducing epoxy layer

17.09.2014 | João Serra, Pierre Bellanger, Pierre O. Bouchard, Marc Bernacki, physica status solidi (c), 2014

Abstract We present 5 × 5 cm2 SLIM‐cut foils obtained by cooling form curing temperatures of 150 °C to room temperature using an epoxy stress inducing layer. Numerical simulations were performed to help the definition of an optimum geometry and we demonstrate the capability to obtain several ...

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