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498 Aktuelle Fachpublikationen zum Thema temperature

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Band tail filling effect in MBE‐grown ternary MgZnO epitaxial layers with high Mg content

12.08.2013 | Mindaugas Karaliūnas, Vilmantas Šukauskas, Edmundas Kuokštis, Shao‐Ying Ting, Jeng‐Jie Huang, C.‐C. Yang, physica status solidi (c), 2013

Abstract In this work, the carrier localization effect is studied in molecular beam epitaxy grown MgZnO epitaxial layers. The photoluminescence (PL) investigation revealed the S ‐shaped PL peak position dependence on temperature. It is usually related to the carrier localization in randomly ...


Effect of Pt decoration on the gas response of ZnO nanoparticles

06.08.2013 | Ahmad Ahmadi Daryakenari, Aleksandra Apostoluk, Jean‐Jacques Delaunay, physica status solidi (c), 2013

Abstract In order to improve the performance of gas sensors based on ZnO nanoparticles, platinum was deposited on the nanoparticle surface using sputtering. Gas‐sensing experiments on Pt‐functionalized ZnO nanoparticles exhibited larger response to ethanol gas at lower operating temperature, ...


Vapour phase epitaxy of Cu2O on a‐plane Al2O3

06.08.2013 | Alexander Wagner, Harald Scherg‐Kurmes, Andreas Waag, Andrey Bakin, physica status solidi (c), 2013

Abstract We present a vapour phase based approach for the epitaxial growth of Cu2O with the utilization of elemental copper and oxygen as precursor materials. At present the implementation of MOCVD approach is hampered by the absence of the chemical source of Cu with high enough vapour ...


Characteristics of ZnO/CuO heterojunctions formed by direct bonding and PLD with bias voltage application

06.08.2013 | Kazuya Komatsu, Yuki Seno, Takao Komiyama, Yasunori Chonan, Hiroyuki Yamaguchi, Takashi Aoyama, physica status solidi (c), 2013

Abstract Current‐voltage (I–V) characteristics of the n‐ZnO/p‐CuO heterojunctions have been investigated by changing the composition of the ZnO films and by using the direct bonding technique to form the heterojunctions. A ZnO film was deposited on an n‐type ZnO ceramic substrate by the PLD ...


Technology of carbon nanotubes production in gas mixtures containing carbon monoxide

01.07.2013 | Alexander Khovavko, Alexey Sviatenko, Victor Kotov, Borys Bondarenko, Andriy Nebesniy, Denis Filonenko, physica status solidi (c), 2013

Abstract High‐temperature processes of carbon nanotubes (CNTs) synthesis are inherently power‐consuming and also are difficult to manage. The analysis of known technologies of CNTs production shows that the majority of low‐temperature processes, anyhow, are closely related with conversion of ...


Holes in germanium quantum wells: spin relaxation and temperature dynamics

19.06.2013 | Kolja Kolata, Niko S. Köster, Ronja Woscholski, Sebastian Imhof, Angela Thränhardt, Christoph Lange, John E. Sipe, F ..., physica status solidi (c), 2013

Abstract We use fs‐pump white‐light‐supercontinuum probe spectroscopy with appropriate polarization configurations to investigate the hole spin and hole cooling dynamics in Germanium quantum wells in the vicinity of the Γ valley. We observe heavy hole spin flip times of up to 1.7 ps at 10, 300 ...


Spin relaxation length in quantum dot spin LEDs

31.05.2013 | Henning Höpfner, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg, Heiko Wende, Werner Keune, Dirk Reute ..., physica status solidi (c), 2013

Abstract We analyse the spin relaxation length during vertical electron transport in spin light‐emitting diode devices at room temperature. We obtain a spin relaxation length of 27 nm in remanence. When a magnetic field is applied, spin relaxation is significantly reduced during transport to ...


Cu(In,Ga)Se2 thin film solar cells prepared by selenization with van Doorn apparatus

22.05.2013 | S. Nakamura, T. Isihara, S. Takakura, Y. Oka, K. Kawamoto, N. Tanaka, T. Yamaguchi, S. Kunitsugu, physica status solidi (c), 2013

Abstract Cu(In,Ga)Se2 (CIGS) thin films were prepared by selenization of metal precursors using van Doorn apparatus. The apparatus provides advantages such as superior Se pressure controllability and simplicity. XRD measurements revealed that the selenized films had a chalcopyrite structure. ...


Investigation of ZnO:Al window layer of Cu2ZnSnS4 thin film solar cells prepared by non‐vacuum processing

22.05.2013 | Takumi Aizawa, Kunihiko Tanaka, Kota Tagami, Hisao Uchiki, physica status solidi (c), 2013

Abstract Cu2ZnSnS4 (CZTS) thin film solar cells have been fabricated using sol‐gel sulfurizing method under non‐vacuum processing. The solar cells structure is Al/ZnO:Al/CdS/ CZTS/Mo/Soda Lime Glass(SLG) substrate. In our previous reports, the surface of CZTS got rougher as the particle ...


Phase transition and Raman‐active modes in TlInS2

13.05.2013 | Raul Paucar, Kazuki Harada, Ryoya Matsumoto, Kazuki Wakita, YongGu Shim, Oktay Alekperov, Nazim Mamedov, physica status solidi (c), 2013

Abstract Raman spectra of layered ternary thallium chalcogenide TlInS2were studied with the aid of 3D confocal Raman system over the temperature range 77–300K in the frequency region of 120–400 cm–1. The observed lines in the obtained Raman spectra were denconvoluted into Lorentzian peaks and ...


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