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516 Aktuelle Fachpublikationen zum Thema temperature

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Improved thermal stability and narrowed line width of photoluminescence from InGaN nanorod by ytterbium doping

18.03.2015 | Jingzhou Wang, Kiran Dasari, Kevin Cooper, Venkata R. Thota, Jason Wright, Ratnakar Palai, David C. Ingram, Eric A. ..., physica status solidi (c), 2015

Abstract Nanorod of in situ Yb‐doped InGaN and undoped InGaN have been grown on (0001) sapphire substrates by plasma assisted molecular beam epitaxy (MBE). Selected regions on Yb‐doped InGaN sample show single dominant near band edge emission (NBE) in green, yellow or orange color due to the ...


Fabrication of AlGaN multiple quantum wells on sapphire with lattice‐relaxation layer

18.03.2015 | Kazuhiro Nakahama, Fumitsugu Fukuyo, Hideto Miyake, Kazumasa Hiramatsu, Harumasa Yoshida, Yuji Kobayashi, physica status solidi (c), 2015

Abstract The influences of three types of lattice‐relaxation layer between AlGaN multiple quantum wells (MQWs) and AlN layer on sapphire substrate were investigated. For structure (a), two‐high‐Al‐mole‐fraction AlGaN layers grown at 1170 °C was prepared. For structure (b), an AlN interlayer ...


A numerical analysis of a MOCVD process for the growth of GaN nanowires using GaCl3 and NH3

18.03.2015 | Edgar Serrano Perez, Miguel A. Nuñez Velazquez, Fernando Juárez Lopez, physica status solidi (c), 2015

Abstract In this paper, the analysis of horizontal cold wall reactor for GaN nanowires growing from GaCl3 and NH3 at atmospheric pressure conditions has been studied. It aims to provide better understanding of the MOCVD process especially of deposition process of GaN nanowires as well as fluid ...


The temperature dependence of the luminescence of rare‐earth‐doped semiconductors: 25 years after Favennec

27.02.2015 | K. P. O'Donnell, physica status solidi (c), 2015

Abstract Twentyfive years after the publication of P. N. Favennec's seminal paper on luminescence from rare‐earth‐doped semiconductors (Electron. Lett. 25, 718–719 (1989), with 390+ citations to date) we examine the long shadow it has cast on recent studies of europium‐doped GaN, aimed at ...


Defect‐enhanced F– ion conductivity in layer‐structured nanocrystalline BaSnF4 prepared by high‐energy ball milling combined with soft annealing

20.11.2014 | Florian Preishuber‐Pflügl, Viktor Epp, Suliman Nakhal, Martin Lerch, Martin Wilkening, physica status solidi (c), 2014

Abstract Fast ion conductors play one of the most important roles in solid state ionics as there is a great demand for their application in safe and powerful electrochemical energy storage systems. For such materials, it is known that the synthesis conditions may have significant impact on the ...


Memristors under the influence of noise and temperature

20.11.2014 | G. A. Patterson, F. Sangiuliano Jimka, P. I. Fierens, D. F. Grosz, physica status solidi (c), 2014

Abstract We study the performance of a manganite sample meant for memresistive applications. In particular, we experimentally address the interplay between temperature and electrical noise the sample is subject to. Results reveal an optimum noise amplitude that maximizes the contrast between ...


Conductivity patterning with Physarum polycephalum: natural growth and deflecting

19.11.2014 | Alice Dimonte, Tatiana Berzina, Angelica Cifarelli, Valentina Chiesi, Franca Albertini, Victor Erokhin, physica status solidi (c), 2014

Abstract The present work is dedicated to the use of Physarum polycephalum slime mold, an unicellular organism self‐adapting, self‐repairing and self‐repellent, for the realization of elements for unconventional computational systems. Physarum continuously changes its shape under the influence ...


Effect of 2.5 MeV proton irradiation on the critical parameters of composite HTS tapes

29.10.2014 | Landysh Antonova, Timofey Demikhov, Alexey Troitskii, Alexander Didyk, Alexander Kobzev, Alexander Yurasov, Sergey S ..., physica status solidi (c), 2014

Abstract In this paper we study the radiation resistance of high temperature superconductor (HTS) tapes based on GdBCO produced by SuperOx‐Japan Company to proton irradiation with an energy of 2.5 MeV in the fluence range from 6.1×1014 p/cm2 to 1×1017 p/cm2. The dependences of critical ...


Ion beam synthesis of embedded III‐As nanocrystals in silicon substrate

29.10.2014 | Rim Khelifi, Mathieu Frégnaux, Yann Le Gall, Dominique Muller, Guy Schmerber, Daniel Mathiot, physica status solidi (c), 2014

Abstract Our goal is to use the versatility of ion beam synthesis to grow nanocrystals of InxGa1‐xAs alloys embedded in a silicon substrate. We study, first, the annealing conditions necessary to grow well defined InAs and GaAs binary nanocrystals. High dose of As, Ga and In is implanted, ...


Raman microscopy as a defect microprobe for hydrogen bonding characterization in materials used in fusion applications

29.10.2014 | Cédric Pardanaud, Younès Addab, Céline Martin, Pascale Roubin, Bernard Pegourié, Martin Oberkofler, Martin Köppen, T ..., physica status solidi (c), 2014

Abstract We present the Raman microscopy ability to detect and characterize the way hydrogen is bonded with elements that will be used for ITER's plasma facing components. For this purpose we first use hydrogenated amorphous carbon samples, formed subsequently to plasma‐wall interactions ...


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