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504 Aktuelle Fachpublikationen zum Thema temperature

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Low temperature hydrogenated microcrystalline silicon‐carbon alloys deposited by RF‐PECVD

10.10.2014 | Sofia Gaiaschi, Marie‐Estelle Gueunier‐Farret, Erik V. Johnson, physica status solidi (c), 2014

Abstract Two sets of hydrogenated microcrystalline silicon carbon alloys were deposited by standard radio frequency (RF) plasma enhanced chemical vapor deposition at a substrate temperature of 175 °C. The effect of the methane flow rate and of the RF‐power were investigated. Samples were ...

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Electroluminescence of germanium LEDs on silicon: Influence of antimony doping

10.10.2014 | Bernhard Schwartz, André Klossek, Martin Kittler, Michael Oehme, Erich Kasper, Jörg Schulze, physica status solidi (c), 2014

Abstract Antimony‐doped Ge‐LEDs were subjected to electroluminescence studies at temperatures about 300 K and 80 K. The LEDs were grown on Si substrates by MBE. The thickness of the active layer was 300 nm. For the p+nn+‐LEDs the Sb concentrations were 1 × 1018, 1 × 1019, 3 × 1019, 4 × 1019, 7 ...

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Silicon film deposition on crystalline, sintered and powder substrates using an inline optical processing CVD system

30.09.2014 | André Augusto, Filipe Serra, António Vallêra, João M. Serra, physica status solidi (c), 2014

Abstract An inline optical CVD process operating at low temperature (10 mm/min) inside the furnace. Solid silicon substrates were laser textured to reduce the reflectivity, leveraging the growth rates. Laser patterning has a strong influence in the growth rate, reaching values up to 9 µm/min. ...

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Effect of total gas pressure in sputtered hydrogenated amorphous silicon

30.09.2014 | Abdelkrim Fedala, Aghilas Dad, Moussa Khefiani‐Guellil, Sonia Tata, Claude Simon, Tayeb Mohammed‐Brahim, physica status solidi (c), 2014

Abstract Hydrogenated amorphous silicon (a‐Si:H) thin films are prepared using DC magnetron sputtering method at a substrate temperature of 200 °C using a plasma of argon and hydrogen gas mixture. The effects of the total gas pressure (TGP) during the deposition on structural, optical and ...

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Room temperature kerfless silicon thin foils obtained via a stress inducing epoxy layer

17.09.2014 | João Serra, Pierre Bellanger, Pierre O. Bouchard, Marc Bernacki, physica status solidi (c), 2014

Abstract We present 5 × 5 cm2 SLIM‐cut foils obtained by cooling form curing temperatures of 150 °C to room temperature using an epoxy stress inducing layer. Numerical simulations were performed to help the definition of an optimum geometry and we demonstrate the capability to obtain several ...

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Properties of a‐SiGe:H thin films: correlation between photosensitivity density of states

17.09.2014 | Lamia Laidoudi, Abdelkrim Fedala, Abla Rahal, physica status solidi (c), 2014

Abstract Thin films of hydrogenated amorphous silicon germanium (a‐Si1‐xGex:H) alloy are prepared using DC magnetron sputtering method, at a substrate temperature of 150 °C. Silicon and germanium are co‐pulverized. All our films are deposited in the same preparation conditions except for those ...

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Band tail filling effect in MBE‐grown ternary MgZnO epitaxial layers with high Mg content

12.08.2013 | Mindaugas Karaliūnas, Vilmantas Šukauskas, Edmundas Kuokštis, Shao‐Ying Ting, Jeng‐Jie Huang, C.‐C. Yang, physica status solidi (c), 2013

Abstract In this work, the carrier localization effect is studied in molecular beam epitaxy grown MgZnO epitaxial layers. The photoluminescence (PL) investigation revealed the S ‐shaped PL peak position dependence on temperature. It is usually related to the carrier localization in randomly ...

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Effect of Pt decoration on the gas response of ZnO nanoparticles

06.08.2013 | Ahmad Ahmadi Daryakenari, Aleksandra Apostoluk, Jean‐Jacques Delaunay, physica status solidi (c), 2013

Abstract In order to improve the performance of gas sensors based on ZnO nanoparticles, platinum was deposited on the nanoparticle surface using sputtering. Gas‐sensing experiments on Pt‐functionalized ZnO nanoparticles exhibited larger response to ethanol gas at lower operating temperature, ...

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Vapour phase epitaxy of Cu2O on a‐plane Al2O3

06.08.2013 | Alexander Wagner, Harald Scherg‐Kurmes, Andreas Waag, Andrey Bakin, physica status solidi (c), 2013

Abstract We present a vapour phase based approach for the epitaxial growth of Cu2O with the utilization of elemental copper and oxygen as precursor materials. At present the implementation of MOCVD approach is hampered by the absence of the chemical source of Cu with high enough vapour ...

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Characteristics of ZnO/CuO heterojunctions formed by direct bonding and PLD with bias voltage application

06.08.2013 | Kazuya Komatsu, Yuki Seno, Takao Komiyama, Yasunori Chonan, Hiroyuki Yamaguchi, Takashi Aoyama, physica status solidi (c), 2013

Abstract Current‐voltage (I–V) characteristics of the n‐ZnO/p‐CuO heterojunctions have been investigated by changing the composition of the ZnO films and by using the direct bonding technique to form the heterojunctions. A ZnO film was deposited on an n‐type ZnO ceramic substrate by the PLD ...

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