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597 Aktuelle Fachpublikationen zum Thema temperature

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MOCVD growth of ZnO nanowires on Ni‐W metallic substrates

03.02.2016 | Gaëlle Amiri, Mohamed Halaoui, Diana Nathalie Montenegro, Pierre Galtier, Vincent Sallet, physica status solidi (c), 2016

Abstract Here we investigate the possibility to grow ZnO nanowires on (100) textured Ni‐W substrates by MOCVD at 850 °C. Due to the oxidation of Ni, direct growth of ZnO nanowires on those metallic substrates was not achieved whereas it was easily obtained on sapphire in the same conditions. ...

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Quantum confined Stark effect of polar and non‐polar ZnO/ZnMgO quantum wells grown by MBE

03.02.2016 | Tomoki Abe, Tatsuya Motoyama, Masaya Yamamoto, Atsushi Yamamoto, Shohei Iwagashita, Hirofumi Kasada, Koshi Ando, Kun ..., physica status solidi (c), 2016

Abstract We have investigated quantum confined Stark effects of polar (O‐polar) and non‐polar ZnO/ZnMgO quantum wells (QWs) by electroabsorption (EA) spectroscopy. The ZnO/ZnMgO QWs were grown by plasma assisted molecular beam epitaxy (PA‐MBE). The ZnO/ZnMgO QWs were grown on c‐plane sapphire ...

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Defect related emission of ZnO and ZnO Cu nanocrystals prepared by electrochemical method

03.02.2016 | T. V. Torchynska, B. El Filali, I. Ch. Ballardo Rodríguez, L. Shcherbyna, physica status solidi (c), 2016

Abstract Photoluminescence (PL), its temperature dependence, and SEM images have been applied for the comparative study of the ZnO and ZnO Cu nanocrystals (NCs). NCs were created by the electrochemical (anodization) method with different NC sizes and annealed at 400 °C for 2 hours in ambient ...

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Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures

03.02.2016 | Simon Hammersley, Menno J. Kappers, Fabien C.‐P. Massabuau, Suman‐Lata Sahonta, Phil Dawson, Rachel A. Oliver, Colin ..., physica status solidi (c), 2016

Abstract In this paper we report on the impact that the quantum well growth temperature has on the internal quantum efficiency and carrier recombination dynamics of two sets of InGaN/GaN multiple quantum well samples, designed to emit at 460 and 530 nm, in which the indium content of the ...

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Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time‐resolved terahertz and photoluminescence spectroscopy

03.02.2016 | Aniela Dunn, Ben F. Spencer, Samantha J. O. Hardman, Darren M. Graham, Simon Hammersley, Matthew J. Davies, Phil Daw ..., physica status solidi (c), 2016

Abstract The mechanisms governing efficiency droop in an In0.18Ga0.82N/GaN multiple quantum well structure were investigated using a combination of ultrafast time‐resolved terahertz and photoluminescence spectroscopy. From excitation fluence dependent studies, a reduction in the room ...

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Anisotropic optical properties of a homoepitaxial (Zn,Mg)O/ZnO quantum well grown on a‐plane ZnO substrate

03.02.2016 | Mohammed J. Mohammed Ali, J.M. Chauveau, T. Bretagnon, physica status solidi (c), 2016

Abstract The optical properties of homoepitaxial non‐polar (Zn,Mg)O/ZnO single quantum wells (QWs) grown by molecular beam epitaxy on a‐plane (11‐20) ZnO substrates are investigated by using reflectance and continuous wave photoluminescence spectroscopies. The reflectivity and CW‐PL spectra ...

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Annealing of frozen‐in defects in ZnO

03.02.2016 | T. Nirk, K. Lott, V. Seeman, L. Türn, M. Viljus, A. Öpik, physica status solidi (c), 2016

Abstract High temperature electrical conductivity (HTEC) as a function of time after step‐like change of Zn vapor pressure (PZn) at fixed ZnO crystal temperature (TZnO) and after step‐like change of TZnO at fixed PZn was measured in undoped ZnO single crystal and in undoped ZnO ceramic sample. ...

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Temperature dependence of GaN MOS capacitor characteristics

27.01.2016 | Zhibo Guo, Ke Tang, T. Paul Chow, physica status solidi (c), 2016

Abstract GaN MOS capacitors on both as‐grown and dry/wet‐etched GaN surfaces are characterized by C‐V and G‐ω measurements at elevated temperatures. The nature of GaN/SiO2 interface traps are determined in detail by extracting interface trap density, surface potential fluctuation, trap time ...

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Model of photoluminescence temperature dependence in GaN/AlN quantum dot structures

27.01.2016 | Ivan A. Aleksandrov, Vladimir G. Mansurov, Vladimir I. Vdovin, Konstantin S. Zhuravlev, physica status solidi (c), 2016

Abstract Temperature dependence of photoluminescence intensity and lifetime of GaN/AlN quantum dots have been investigated and compared a theoretical model. Experimental photoluminescence lifetime is mainly determined by radiative process at low temperatures, but somewhat differs from the ...

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Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells

27.01.2016 | George M. Christian, Simon Hammersley, Matthew J. Davies, Philip Dawson, Menno J. Kappers, Fabien C.‐P. Massabuau, R ..., physica status solidi (c), 2016

Abstract We report on the effects of varying the number of quantum wells (QWs) in an InGaN/GaN multiple QW (MQW) structure containing a 23 nm thick In0.05Ga0.95N prelayer doped with Si. The calculated conduction and valence bands for the structures show an increasing total electric field ...

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