Indium gallium phosphide (InGaP) is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

It is used mainly in HEMT and HBT structures, but also for the fabrication of high efficiency solar cells used for space applications and, in combination with aluminium (AlGaInP alloy) to make high brightness LEDs with orange-red, orange, yellow, and green colors.

Indium gallium phosphide is an alloy of indium phosphide and gallium phosphide.

Special importance has an alloy of Ga_0.5In_0.5P, which is almost lattice matched to GaAs. This allows, in combination with (Al_xGa_1-x)_0.5In_0.5, the growth lattice matched quantum wells for red emitting semiconductor lasers, e.g. red emitting (650nm) RCLEDs or VCSELs for PMMA plastic optical fibers.

Ga_0.5In_0.5P is used as the high energy junction on double and triple junction photovoltaic cells grown on GaAs.

A different alloy of GaInP, lattice matched to the underlying GaInAs,is utilized as the high energy junction GaInP/GaInAs/Ge triple junction photovoltaic cells.

See also

• Gallium phosphide
• Indium(III)_phosphide
• Indium gallium nitride
• Indium gallium arsenide

References

• E.F. Schubert "Light emitting diodes", ISBN 0-521-53351-1