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CuO nanowires growth on Cu2O by in-situ thermal oxidation in air

CuO nanowires were synthesized by in-situ thermal oxidation of Cu2O for the first time in the temperature range of 300~750 ℃ in air. In this process, the effects of annealing temperature and growth time on the growth of CuO nanowires were investigated by SEM, XRD, EDS mapping and line-scan profile measuremen

Autoren:   Ang Li; Huaihe Song; Jisheng Zhou; Xiaohong Chen; Siyuan Liu
Journal:   CrystEngComm
DOI:   10.1039/C3CE40985F
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