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Synthesis and Characterization of Few‐layer Nanosheets of GaN and Other Metal Nitrides

Abstract

By making use of the fact that single‐ and few‐layer nanosheets of GaS and GaSe are readily obtained by micromechanical cleavage because of their mica‐like morphology, we were able to prepare GaN nanosheets by the reaction of these chalcogenide nanosheets with ammonia at 600–650 °C. The nitride nanosheets were characterized by transmission electron microscopy, atomic force microscopy, and other methods. Few‐layer VN was obtained by high‐temperature ammonolysis of exfoliated V2O5 sheets. Ammonolysis of MoO3 and MoS2 nanosheets yields the nitride nanosheets.

Autoren:   M. B. Sreedhara, K. Vasu, C. N. R. Rao
Journal:   Zeitschrift für anorganische und allgemeine Chemie
Jahrgang:   2014
Seiten:   n/a
DOI:   10.1002/zaac.201400386
Erscheinungsdatum:   15.10.2014
Fakten, Hintergründe, Dossiers
  • microscopy
  • synthesis
  • morphology
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