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Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot

In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of interdot level spacing and magnetic field. With varied interdot tunnel coupling, we can identify different dominant spin relaxation mechanisms. Application of a strong out-of-plane magnetic field causes an avoided singlet–triplet level crossing, from which the heavy hole g-factor ∼0.93 and the strength of spin–orbit interaction ∼110 μeV can be obtained. The demonstrated strong spin–orbit interaction of heavy holes promises fast local spin manipulation using only electric fields, which is of great interest for quantum information processing.

Autoren:   Ruoyu Li; Fay E. Hudson; Andrew S. Dzurak; Alexander R. Hamilton
Journal:   Nano Letters
Jahrgang:   2015
DOI:   10.1021/acs.nanolett.5b02561
Erscheinungsdatum:   12.10.2015
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