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2.752 Aktuelle Fachpublikationen in physica status solidi (b)
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Electronic Structure and Optical Absorption Spectra of C–Cr Co‐Doped Anatase TiO2 Based on First Principles
19.01.2018 | Cheng Liu, Yumin Song, Xiaohua Yu, Jianxiong Liu, Jiushuai Deng, physica status solidi (b), 2018
The geometrical structure, defect formation energies, electrical and optical properties of C and/or Cr doped anatase TiO2 are calculated by GGA + U method under the framework of density functional theory. The relationship between band structure and light absorption is revealed. The results show ...
First‐Principles Characterization of Equilibrium Vacancy Concentration in Metamagnetic Shape Memory Alloys: An Example of Ni2MnGa
19.01.2018 | Yuhao Wang, Daniel Salas, Bharat Medasani, Peter Entel, Ibrahim Karaman, Raymundo Arróyave, Thien C. Duong, physica status solidi (b), 2018
Despite the fact that there is evidence for the important role that vacancies play in the martensitic transformation (MT) behavior of metamagnetic shape memory alloys (MMSMAs), little theoretical – and even experimental – work on the thermodynamics and kinetics of point defects in these systems ...
Influence of Carbon Nanotube Spatial Distribution on Electromagnetic Properties of Nanotube–Polymer Composites (Phys. Status Solidi B 1/2018)
17.01.2018 | Sergey I. Moseenkov, Dmitry V. Krasnikov, Valentin I. Suslyaev, Evgeniy Yu. Korovin, Kiril V. Dorozhkin, Vladimir L. ..., physica status solidi (b), 2018
The analysis of numerous experimental and theoretical studies demonstrates that the electrophysical properties of composites, such as electrical conductivity, dielectric and magnetic permeability, are most sensitive to changes in the packing of particles in the composite, especially when the ...
Spin and Optical Properties of Silicon Vacancies in Silicon Carbide − A Review (Phys. Status Solidi B 1/2018)
17.01.2018 | S. A. Tarasenko, A. V. Poshakinskiy, D. Simin, V. A. Soltamov, E. N. Mokhov, P. G. Baranov, V. Dyakonov, G. V. Astakhov, physica status solidi (b), 2018
Atomic‐scale defects in silicon carbide, a widely used material in semiconductor industry, reveal high potential for quantum technologies. Spin‐3/2 color centers associated with silicon vacancies are of particular interest for fundamental research and applications in sensorics and spintronics. ...
Spin and Optical Properties of Silicon Vacancies in Silicon Carbide − A Review (Phys. Status Solidi B 1/2018)
17.01.2018 | S. A. Tarasenko, A. V. Poshakinskiy, D. Simin, V. A. Soltamov, E. N. Mokhov, P. G. Baranov, V. Dyakonov, G. V. Astakhov, physica status solidi (b), 2018
Atomic‐scale defects in silicon carbide, a widely used material in semiconductor industry, reveal high potential for quantum technologies. Spin‐3/2 color centers associated with silicon vacancies are of particular interest for fundamental research and applications in sensorics and spintronics. ...
Effects of Ga Supply on the Growth of (11‐22) AlN on m‐Plane (10‐10) Sapphire Substrates
16.01.2018 | Masafumi Jo, Hideki Hirayama, physica status solidi (b), 2018
Flat and high‐quality semipolar AlN layers are crucial to realizing polarization‐reduced deep‐UV optical devices. We investigate the effects of Ga supply during the growth of semipolar AlN on m‐plane sapphire with the aim to produce better surface morphology. Incorporation of Ga into AlN is ...
Effects of Biaxial Strains and High Pressure on the Structural, Electronic, and Vibrational Properties of DC‐HgM2Te4 (M = Al, In)
15.01.2018 | Shaobo Zhang, Liwei Shi, Chuanfu Huang, Wangsuo Xia, Lanyang Zhang, Haiyan Zhu, physica status solidi (b), 2018
First‐principles calculations are performed to study the effects of biaxial strains and high pressure on the structural, electronic, and lattice dynamical properties of defect chalcopyrite HgM2Te4 (M = Al, In) semiconductors. The evolutions of optimized structural parameters, band‐gap energy, ...
Polarity‐ and Site‐Controlled Metal Organic Vapor Phase Epitaxy of 3D‐GaN on Si(111)
15.01.2018 | Christian Blumberg, Simon Grosse, Nils Weimann, Franz‐Josef Tegude, Werner Prost, physica status solidi (b), 2018
A site‐ and polarity‐controlled MOVPE growth of 3D‐GaN on Si(111) substrates is established using the polarity‐dependent growth speed of GaN on an intermediate AlN layer. For hydrogenated Si or elevated AlN growth temperatures mixed‐polar growth is observed. N‐polarity could be realized on ...
Polarity‐ and Site‐Controlled Metal Organic Vapor Phase Epitaxy of 3D‐GaN on Si(111)
15.01.2018 | Christian Blumberg, Simon Grosse, Nils Weimann, Franz‐Josef Tegude, Werner Prost, physica status solidi (b), 2018
A site‐ and polarity‐controlled MOVPE growth of 3D‐GaN on Si(111) substrates is established using the polarity‐dependent growth speed of GaN on an intermediate AlN layer. For hydrogenated Si or elevated AlN growth temperatures mixed‐polar growth is observed. N‐polarity could be realized on ...
The Characterization and Optimization of GaN Cap Layers and SiN Cap Layers on AlGaN/GaN HEMT Structures Grown on 200 mm GaN on Silicon
12.01.2018 | Matthew Charles, Yannick Baines, Renan Bouis, Anne‐Marie Papon, physica status solidi (b), 2018
We have studied capping layers for AlGaN‐based high electron mobility transistor (HEMT) structures, looking at different thicknesses of GaN, SiN, and GaN + SiN caps. SiN capping has no effect on the sheet resistance of the layers, as expected from a high quality amorphous passivation layer. GaN ...
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